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參數(shù)資料
| 型號(hào)： | 5SDD51L2600 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 5150 A, 1850 V, SILICON, RECTIFIER DIODE |
| 封裝： | L, 2 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 388K |
| 代理商： | 5SDD51L2600 |
5SDD 51L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1103-01 Sep. 01
page 2 of 5
On-state
IFAVM
Max. average on-state
current
5150 A
IFRMS
Max. RMS on-state current
8080 A
50 Hz, TC = 90°C, Half sine wave
IFSM
65 kA
tp
=
10 ms Tj = 175°C
Max. peak non-repetitive
surge current
70 kA
tp
=
8.3 ms After surge:
I
2t
Limiting load integral
21125 kA
2stp =
10 ms VR = 0V
20335 kA
2stp =
8.3 ms
VF
On-state voltage
1.18 V
IF
=
5000 A
VF0
Threshold voltage
0.77 V
IF
=
2500 - 7500 A
Tj = 175°C
rF
Slope resistance
0.082 m
Switching
Qrr
Recovery charge
diF/dt = -10A/s
VR = 200 V
max
7000 As
IFRM
= 4000A
Tj = 175°C
Thermal
Tjmax
Max. operating junction temperature
range
175 °C
Tstg
Storage temperature range
-40…150 °C
RthJC
Thermal resistance
16 K/kW
Anode side cooled
junction to case
16 K/kW
Cathode side cooled
8 K/kW
Double side cooled
RthCH
Thermal resistance case to
6 K/kW
Single side cooled
heat sink
3 K/kW
Double side cooled
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
τ
i1
2
3
4
Ri(K/kW)
3.5
1
τi(s)
1.0231
0.5199
0.016
Fig. 1 Transient thermal impedance junction to case.
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