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參數(shù)資料
| 型號(hào)： | 5SDD70H2000 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 7030 A, 2000 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 73K |
| 代理商： | 5SDD70H2000 |
5SDD 70H2000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/099/03 Jul-10
2 of 5
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = 0 ÷ 190 °C
5SDD 70H2000
5SDD 70H1800
2 000
1 800
V
IFAVm
Average forward current
Tc = 85 °C
7 030
A
IFRMS
RMS forward current
Tc = 85 °C
11 042
A
IRRM
Repetitive reverse current
VR = VRRM
120
mA
tp = 8.3 ms
80 000
A
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse, Tj = 25 °C
tp = 10 ms
75 000
A
tp = 8.3 ms
69 000
A
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 10 ms
65 000
A
tp = 8.3 ms
26 640 000
A
2s
I
2t
Limiting load integral
VR = 0 V, half sine pulse, Tj = 25 °C
tp = 10 ms
28 125 000
A
2s
tp = 8.3 ms
20 010 000
A
2s
Limiting load integral
VR = 0 V, half sine pulse
tp = 10 ms
21 125 000
A
2s
Tjmin -Tjmax
Operating temperature range
0 ÷ 190
°C
TSTG
Storage temperature range
-40 ÷ 190
°C
Unless otherwise specified Tj = 190 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage
0.861
V
rT
Forward slope resistance
IF1 = 11 048 A, IF2 = 33 143 A
0.046
m
VFM
Maximum forward voltage
IFM = 4 000 A
0.970
V
Qrr
Recovered charge
VR = 100 V, IFM = 2000 A, diF/dt = -30 A/s
4 000
C
Unless otherwise specified Tj = 190 °C
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