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參數(shù)資料
| 型號(hào)： | 5SDF08F4505 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 767 A, 4500 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | 5SDF08F4505 |
5SDF 08F4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DM/201/06 Jul-10
9 of 10
Reverse Recovery Characteristics
-1000
5
t
v
F
(t
),
i F
(t
)
-1000
V rrM
- di F /dt
t rr
v F (t)
i F (t)
I rrM
V R
0.25 I rrM
0.9 I rrM
Q rr
I FM
t s t f
100
1000
10000
100
1000
10000
I FM ( A )
Q
rr
(
C
)
-di F /dt = 400 A/s
200 A/s
100 A/s
80 A/s
Fig. 12 Typical waveforms and definition of symbols
at reverse recovery of a diode,
inductive switching without RC snubber
Fig. 13 Max. recovered charge vs. forward
current, trapezoid pulse, Tj = Tjmax
100
1000
10000
10
100
1000
- di F /dt ( A/s )
Q
rr
(
C
)
I
FM = 2000 A
1000 A
500 A
10
100
1000
10
100
1000
- di F /dt ( A/s )
I r
rM
(
A
)
I FM = 2000 A
1000 A
500 A
Fig. 14 Max. recovered charge vs. rate of fall
of forward current, trapezoid pulse, Tj = Tjmax
Fig. 15 Max. reverse recovery current
vs. rate of fall of forward current,
trapezoid pulse, Tj = Tjmax
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