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參數(shù)資料
| 型號： | 5SLX12E1200 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 50 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | 7 X 7 MM, DIE |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 5SLX12E1200 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
5200 V
IF
=
80 A
Die size: 14.3 x 14.3 mm
Doc. No. 5SYA1657-01 Sep 05
Low on-state voltage
Soft reverse-recovery
Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter
Symbol
Conditions
min
max
Unit
Repetitive peak reverse voltage
VRRM
5200
V
Continuous forward current
IF
80
A
Repetitive peak forward current
IFRM
Limited by Tvjmax
160
A
Junction temperature
Tvj
-40
125
°C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Tvj = 25 °C
2.5
V
Continuous forward voltage
VF
IF = 80 A
Tvj = 125 °C
2.7
V
Tvj = 25 °C
2
A
Continuous reverse current
IR
VR = 5200 V
Tvj = 125 °C
7
mA
Tvj = 25 °C
98
A
Peak reverse recovery current
Irr
Tvj = 125 °C
125
A
Tvj = 25 °C
110
C
Recovered charge
Qrr
Tvj = 125 °C
175
C
Tvj = 25 °C
840
ns
Reverse recovery time
trr
Tvj = 125 °C
1330
ns
Tvj = 25 °C
235
mJ
Reverse recovery energy
Erec
IF = 80 A,
VR = 2800 V,
di/dt = 350 A/s,
Lσ = 3000 nH,
Inductive load,
Switch:
2x 5SMX12N4506
Tvj = 125 °C
384
mJ
2) Characteristic values according to IEC 60747 - 2
Diode-Die
5SLX 12M5200
PRELIMINARY
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