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參數(shù)資料
| 型號(hào)： | 60LQ045 |
| 元件分類： | 整流器 |
| 英文描述： | 60 A, 45 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC, SMD1, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 49K |
| 代理商： | 60LQ045 |
60LQ045
2
www.irf.com
Part number
60LQ045
VR
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
45
Parameters
Limits
Units
Conditions
IF(AV) Max. Average Forward Current
60
A
50% duty cycle @ TC = 105°C, square waveform
See Fig. 5
IFSM
Max. Peak One Cycle Non - Repetitive
400
A
@ tp = 8.3 ms half-sine
Surge Current
Absolute Maximum Ratings
Parameters
Limits
Units
Conditions
TJ
Max.Junction Temperature Range
-55 to 150
°C
Tstg
Max. Storage Temperature Range
-55 to 150
°C
RthJC Max. Thermal Resistance, Junction
1.0
°C/W
DC operation
See Fig. 4
to Case
wt
Weight (Typical)
2.6
g
Die Size
200X200
mils
Case Style
SMD-1
Thermal-Mechanical Specifications
Q Pulse Width < 300s, Duty Cycle < 2%
R Pins 2 and 3 externally tied together
Electrical Specifications
Parameters
Limits
Units
Conditions
VFM
Max. Forward Voltage Drop
0.68
V
@ 60A
TJ = 25°C
R
See Fig. 1
Q
0.82
V
@ 120A
0.6
V
@ 60A
TJ = 125°C
R
0.74
V
@ 120A
IRM
Max. Reverse Leakage Current
0.8
mA
TJ = 25°C
VR = rated VR
R
See Fig. 2
Q
45
mA
TJ = 125°C
CT
Max. Junction Capacitance
2900
pF
VR = 5VDC, ( 1MHz, 25°C )
R
L S
Typical Series Inductance
5.9
nH
Measured from center of cathode pad to center of
anode pad
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