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參數(shù)資料
| 型號： | 60LQ100 |
| 元件分類： | 整流器 |
| 英文描述： | 60 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC, SMD1, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 79K |
| 代理商： | 60LQ100 |
60LQ100
2
www.irf.com
Part number
60LQ100
VR
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
100
Pulse Width < 300s, Duty Cycle < 2%
Pins 2 and 3 externally tied together
Parameters
60LQ100
Units
Conditions
TJ
Max.Junction Temperature Range
-55 to 150
°C
Tstg
Max. Storage Temperature Range
-55 to 150
°C
RthJC Max. Thermal Resistance, Junction
1.0
°C/W
DC operation
See Fig. 4
to Case
RthJC
Max. Thermal Resistance, Junction
0.50
°C/W
DC operation
to case
wt
Weight (Typical)
2.6
g
Die Description (Square)
0.20
inches
Case Style
SMD-1
Thermal-Mechanical Specifications
Parameters
60LQ100
Units
Conditions
IF(AV) Max. Average Forward Current
60
A
50% duty cycle @ TC = 102°C, rectangular waveform
See Fig. 5
IFSM
Max. Peak One Cycle Non - Repetitive
400
A
@ tp = 8.3 ms sine
Surge Current
Absolute Maximum Ratings
Parameters
60LQ045
Units
Conditions
VFM
Max. Forward Voltage Drop
0.62
V
@ 10A
See Fig. 1
0.95
V
@ 60A
TJ = 25°C
1.15
V
@ 120A
0.68
V
@ 10A
TJ = -55°C
0.70
V
@ 60A
TJ = 125°C
0.97
V
@ 120A
IRM
Max. Reverse Leakage Current
0.8
mA
TJ = 25°C VR = rated VR
See Fig. 2
45
mA
TJ = 125°C
CT
Max. Junction Capacitance
1400
pF
VR = 5VDC, ( 100KHz to 1MHz) 25°C
L S
Typical Series Inductance
2.8
nH
Measured from center of bond pad to end of anode
bonding wire
Electrical Specifications
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