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    1. 參數(shù)資料
      型號: 60MT140KB
      元件分類: 橋式整流
      英文描述: 3 PHASE, 60 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
      封裝: INT-A-PAK-6
      文件頁數(shù): 2/7頁
      文件大?。?/td> 95K
      代理商: 60MT140KB
      60-70MT..KB Series
      2
      Bulletin I27500 rev. A 05/03
      www.irf.com
      ELECTRICAL SPECIFICATIONS
      Voltage Ratings
      Voltage
      V
      RRM
      , maximum repetitive
      V
      RSM
      , maximum non-
      I
      RRM
      max.
      Type number
      Code
      peak reverse voltage
      repetitive peak rev. voltage
      @ T
      J
      max.
      VV
      mA
      80
      800
      900
      100
      1000
      1100
      60-70MT..KB
      120
      1200
      1300
      10
      140
      1400
      1500
      160
      1600
      1700
      I
      O
      Maximum DC output current
      60 (75)
      70 (90)
      A
      120° Rect conduction angle
      @ Case temperature
      85 (61)
      85 (57)
      °C
      I
      FSM
      Maximum peak, one-cycle forward,
      420
      480
      A
      t = 10ms
      No voltage
      non-repetitive surge current
      440
      500
      t = 8.3ms
      reapplied
      350
      400
      t = 10ms
      100% V
      RRM
      370
      420
      t = 8.3ms
      reapplied
      Initial T
      J
      = T
      J
      max.
      I2t
      Maximum I2t for fusing
      870
      1150
      A2s
      t = 10ms
      No voltage
      790
      1050
      t = 8.3ms
      reapplied
      610
      800
      t = 10ms
      100% V
      RRM
      560
      730
      t = 8.3ms
      reapplied
      I2
      √t
      Maximum I2
      √t for fusing
      8700
      11300
      A2
      √s t = 0.1 to 10ms, no voltage reapplied
      VF(TO)1 Low level value of threshold voltage
      0.85
      0.86
      V
      (16.7% x
      π x I
      F(AV)
      < I <
      π x I
      F(AV)
      ), @ T
      J
      max.
      VF(TO)2 High level value of threshold voltage
      1.07
      1.08
      (I >
      π x I
      F(AV)), @ TJ max.
      rf1
      Low level value of forward slope resistance
      8.04
      7.35
      m
      (16.7% x π x I
      F(AV) < I < π x IF(AV)), @ TJ max.
      rf2
      High level value of forward slope resistance
      7.08
      6.53
      (I >
      π x I
      F(AV)), @ TJ max.
      V
      FM
      Maximum forward voltage drop
      1.75
      1.55
      V
      I
      pk
      = 100A, T
      J
      = 25°C, t
      p
      = 400s single junction
      V
      INS
      RMS isolation voltage
      4000
      V
      T
      J
      = 25°C, all terminal shorted
      f = 50Hz, t = 1s
      Parameter
      60MT.KB 70MT.KB Units Conditions
      Forward Conduction
      Thermal and Mechanical Specifications
      T
      J
      Max. junction operating temperature range
      -40 to 150
      °C
      Tstg
      Max. storage temperature range
      -40 to 150
      °C
      RthJC
      Max. thermal resistance, junction to case
      0.37
      0.29
      K/W
      DC operation per module
      2.22
      1.75
      DC operation per junction
      0.40
      0.34
      120° Rect condunction angle per module
      2.42
      2.01
      120° Rect condunction angle per junction
      RthCS Max. thermal resistance, case to heatsink
      0.03
      K/W
      Per module
      Mounting surface smooth, flat and greased
      T
      Mounting torque ± 10%
      to heatsink
      4 to 6
      Nm
      to terminal
      3 to 4
      wt
      Approximate weight
      176
      g
      Parameter
      60MT.KC 70MT.KC Units Conditions
      A mounting compound is recommended and
      the
      torque should be rechecked after a
      period of 3 hours to allow for the spread of the
      compound. Lubricated threads.
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