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參數(shù)資料
| 型號： | 62256 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 158K |
| 代理商： | 62256 |
Revision 4.0
December 1997
KM62256C Family
CMOS SRAM
2
32Kx8 bit Low Power CMOS Static RAM
FEATURES
Process Technology : 0.7
μ
m CMOS
Organization : 32Kx8
Power Supply Voltage : Single 5V
±
10%
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 28-DIP-600, 28-SOP-450,
28-TSOP1 -0813.4F/R
The KM62256C family is fabricated by SAMSUNG
′
s advanced
CMOS process technology. The family supports various operat-
ing temperature ranges and has various package types for user
flexibility of system design. The family also support low data
retention voltage for battery back-up operation with low data
retention current.
GENERAL DESCRIPTION
PIN DESCRIPTION
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
NameName
Function
A
0
~A
14
Address Inputs
WE
Write Enable Input
CS
Chip Select Input
OE
Output Enable Input
I/O
1
~I/O
8
Data Inputs/Outputs
Vcc
Power(5V)
Vss
Ground
28-DIP
28-SOP
15
16
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PRODUCT FAMILY
Product Family
Operating Temperature.
Speed(ns)
PKG Type
Power Dissipation
Standby
(I
SB1
, Max)
100
μ
A
20
μ
A
100
μ
A
50
μ
A
100
μ
A
50
μ
A
Operating
(Icc
2
)
KM62256CL
Commercial (0~70
°
C)
55/70ns
28-DIP, 28-SOP
28-TSOP I R/F
70mA
KM62256CL-L
KM62256CLE
Extended (-25~85
°
C)
70ns
28-SOP
28-TSOP I R/F
KM62256CLE-L
KM62256CLI
Industrial (-40~85
°
C)
70ns
28-SOP
28-TSOP I R/F
KM62256CLI-L
FUNCTIONAL BLOCK DIAGRAM
OE
A9
A8
WE
A14
A12
A7
A6
A5
A4
A3
A10
CS
I/O8
I/O7
I/O6
I/O4
I/O3
I/O2
A0
A1
A2
28-TSOP
Type I - Forward
1
2
3
4
5
6
7
8
9
10
11
12
13
14
27
26
25
24
23
22
21
20
19
18
17
16
15
28
28-TSOP
Type I - Reverse
A11
OE
A9
A8
A13
WE
VCC
A3
A4
A14
A12
A7
A6
A5
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
27
28
26
25
24
23
22
21
20
19
18
17
16
15
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
512 rows
64
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1
A2
A9
A10
A11
A3
A4
A5
A6
A7
A8
A13
CS
WE
I/O
1
Data
cont
Data
cont
OE
I/O
8
A12
A14
Control
Logic
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