Electrical Characteristics
Tables of Data
68HC(9)12DG128 Rev 1.0
MOTOROLA
Electrical Characteristics
357
Tables of Data
Table 63 Maximum Ratings
(1)
1. Permanent damage can occur if maximum ratings are exceeded. Exposures to voltages or currents in excess of recommended
values affects device reliability. Device modules may not operate normally while being exposed to electrical extremes.
2. One pin at a time, observing maximum power dissipation limits. Internal circuitry protects the inputs against damage caused
by high static voltages or electric fields; however, normal precautions are necessary to avoid application of any voltage
higher than maximum-rated voltages to this high-impedance circuit. Extended operation at the maximum ratings can ad-
versely affect device reliability. Tying unused inputs to an appropriate logic voltage level (either GND or V
DD
) enhances
reliability of operation.
Rating
Symbol
Value
Unit
Supply voltage
V
DD
,
V
DDA
,
V
DDX
0.3 to
+
6.5
V
Input voltage
V
IN
0.3 to
+
6.5
V
Operating temperature range
68HC(9)12DG128PV8
68HC(9)12DG128CPV8
68HC(9)12DG128VPV8
68HC(9)12DG128MPV8
T
A
T
L
to T
H
0 to
+
70
40 to
+
85
40 to
+
105
40 to
+
125
°
C
Storage temperature range
T
stg
55 to
+
150
°
C
Current drain per pin
(2)
Excluding V
DD
and V
SS
I
IN
±
25
mA
V
DD
differential voltage
V
DD
V
DDX
6.5
V
Table 64 Thermal Characteristics
Characteristic
Symbol
Value
Unit
Average junction temperature
T
J
T
A
+
(P
D
×
Θ
JA
)
°
C
Ambient temperature
T
A
User-determined
°
C
Package thermal resistance (junction-to-ambient)
112-pin quad flat pack (QFP)
Θ
JA
40
°
C/W
Total power dissipation
(1)
1. This is an approximate value, neglecting P
I/O
.
2. For most applications P
I/O
P
INT
and can be neglected.
3. K is a constant pertaining to the device. Solve for K with a known T
A
and a measured P
D
(at equilibrium). Use this value of
K to solve for P
D
and T
J
iteratively for any value of T
A
.
P
D
P
INT
+
P
I/O
or
T
J
273
°
C
+
W
Device internal power dissipation
P
INT
I
DD
×
V
DD
W
I/O pin power dissipation
(2)
P
I/O
User-determined
W
A constant
(3)
K
P
D
×
(T
A
+
273
°
C)
+
Θ
JA
×
P
D2
W ·
°
C
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3-elec