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參數(shù)資料
| 型號： | 6F120MPBF |
| 元件分類： | 整流器 |
| 英文描述： | 6 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 72K |
| 代理商： | 6F120MPBF |
6F(R) Series
2
Bulletin I20206 rev. A 09/98
www.irf.com
Voltage
V
RRM
, maximum
V
RSM
, maximum non-
V
R(BR)
, minimum
I
RRM
max.
Type number
Code
repetitive peak
avalanche
@ T
J
= 175°C
reverse voltage
voltage
VV
V
(1)
mA
10
100
150
--
20
200
275
--
40
400
500
6F(R)
60
600
725
750
12
80
800
950
100
1000
1200
1150
120
1200
1400
1350
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
F(AV)
Max. average forward current
6
A
180° conduction, half sine wave
@ Case temperature
160
°C
I
F(RMS)
Max. RMS forward current
9.5
A
P
R
Maximum non-repetitive
4
K/W
10s square pulse, T
J = T J max.
peak reverse power
see note (2)
I
FSM
Max. peak, one-cycle forward,
159
t = 10ms
No voltage
non-repetitive surge current
167
t = 8.3ms
reapplied
134
t = 10ms
100% V
RRM
141
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
127
t = 10ms
No voltage
Initial T
J = TJ max.
116
t = 8.3ms
reapplied
90
t = 10ms
100% V
RRM
82
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
1270
A2
√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
1.10
V
I
pk
= 19A, T
J = 25°C, t
p
= 400s rectangular wave
Parameter
6F(R)
Units Conditions
5.6
(I >
π x I
F(AV)), TJ = TJ max.
15.7
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
m
0.86
(I >
π x I
F(AV)), TJ = TJ max.
0.63
(16.7% x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
V
A2s
A
Forward Conduction
(2) Available only for Avalanche version, all other parameters the same as 6F.
(1) Avalanche version only available from V
RRM 400V to 1200V.
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