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參數(shù)資料
| 型號： | 6MBI100U2B-060 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT MODULE (U series) 600V / 100A |
| 中文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 127K |
| 代理商： | 6MBI100U2B-060 |
V
CE
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=100mA
V
GE
=15V
Ic=100A
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=300V
I
C
=100A
V
GE
=±15V
R
G
= 33
V
GE
= 0 V
I
F
=100A
I
F
=100A
T=25°C
T=100°C
T=25/50°C
-
-
-
-
1.0
200
6.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.7
2.20
2.35
1.85
2.00
8.4
0.40
0.22
0.16
0.48
0.07
1.95
2.00
1.60
1.65
-
3.4
7.7
2.50
-
-
-
-
1.20
0.60
-
1.20
0.45
2.30
-
-
-
0.35
-
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(terminal)
V
F
(chip)
t
rr
R lead
R
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip *
Resistance
B value
T
I
CES
I
GES
V
GE(th)
B
mA
nA
V
V
nF
μs
V
μs
m
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
IGBT
FWD
With thermal compound
Contact thermal resistance * Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Thermal resistance ( 1 device ) Rth(j-c)
Thermal resistance Characteristics
IGBT Module
Equivalent Circuit Schematic
- 5000
465 495 520
3305 3375 3450
-
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
6MBI100U2B-060
U
V
W
1
2
3
4
5
6
7
8
9
10
11
12
13,14,15
16,17,18
21,22,23
24,25,26
19
20
27,28,29
30,31,32
33,34,35
-
-
-
-
-
0.33
0.66
-
°C/W
0.05
* Biggest internal terminal resistance among arm.
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