參數(shù)資料
型號: 6MBI35S-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: IGBT(1200V/35A)
中文描述: 50 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-17
文件頁數(shù): 3/4頁
文件大小: 498K
代理商: 6MBI35S-120
6MBI35S-120
IGBT Modules
0
20
40
60
50
100
500
1000
ton
tr
toff
tf
Switching time vs. Collector current (typ.)
Vcc=600V,V
GE=
±15V, Rg=33
,Tj=25
o
C
S
Collector current : Ic [ A ]
0
20
40
60
50
100
500
1000
tf
tr
ton
toff
Switching time vs. Collector current (typ.)
Vcc=600V,V
GE=
±15V, Rg=33
,Tj=125
o
C
Collector current : Ic [ A ]
S
10
50
100
500
50
100
500
1000
5000
toff
ton
tr
tf
Switching time vs. Gate resistance (typ.)
Vcc=600V,Ic=35A,V
GE=
±15V, Tj=25
o
C
Gate resistance : Rg [
]
S
0
20
40
60
0
2
4
6
8
10
Err(25
o
C)
Eoff(25o)C
Eon(25
o
C)
Err(125
o
C)
Eoff(125
o
C)
Eon(125
o
C)
Switching loss vs. Collector current (typ.)
Vcc=600V,V
GE=
±15V, Rg=33
S
Collector current : Ic [ A ]
10
50
100
500
0
5
10
15
20
25
Switching loss vs. Gate resistance (typ.)
Vcc=600V,Ic=35A,V
GE=
±15V,Tj=125
o
C
S
Gate resistance : Rg [
]
Eon
Err
Eoff
0
200
400
600
800
1000
1200
1400
0
20
40
60
80
100
Reverse bias safe operating area
Collector - Emitter voltage : VCE [ V ]
C
+VGE=15V, -VGE=
,Tj=
o
C
=
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參數(shù)描述
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