6MBP150RA120
IGBT-IPM
Electrical characteristics of control circuit
(at Tc=Tj=25°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature, Fig.1
T
COH
T
CH
T
jOH
T
jH
I
OC
t
DOC
V
UV
V
H
t
ALM
t
SC
R
ALM
*
7
Switching frequency of IPM
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
fsw=0 to 15kHz Tc=-20 to 100°C *
7
fsw=0 to 15kHz Tc=-20 to 100°C *
7
surface of IGBT chips
Tj=125°C
Tj=25°C Fig.2
Tj=25°C Fig.3
I
ccp
I
CCN
V
in(th)
V
Z
3
10
1.00
1.70
-
110
-
150
-
225
-
11.0
0.2
1.5
-
1425
-
-
1.35
2.05
8.0
-
20
-
20
-
10
-
-
2
-
1500
18
65
1.70
2.40
-
125
-
-
-
-
-
12.5
-
-
12
1575
mA
mA
V
V
V
°C
°C
°C
°C
A
μs
V
V
ms
μs
ohm
Dynamic characteristics
(at Tc=Tj=125°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Switching time (IGBT)
ton IC=150A, VDC=600V
toff
trr IF=150A, VDC=600V
Switching time (FWD)
0.3 - -
- - 3.6
- - 0.4
μs
μs
μs
Thermal characteristics
(Tc=25°C)
Item Symbol Typ. Max. Unit
Junction to Case thermal resistance
INV IGBT
FWD
Case to fin thermal resistance with compound
Rth(j-c)
Rth(j-c)
Rth(c-f)
- 0.12
- 0.29
0.05 -
°C/W
°C/W
°C/W
Item Symbol Min. Typ. Max. Unit
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)
- 2.5 - 3.0 N·m
V
DC
200 - 800 V
V
CC
13.5 15 16.5
V
f
SW
1 - 20 kHz
- 2.5 - 3.0 N·m
Recommendable value