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參數(shù)資料
| 型號(hào)： | 70N06L-TF3-L |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET |
| 中文描述： | 七零安培，60伏特N溝道功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 168K |
| 代理商： | 70N06L-TF3-L |
70N06
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-089,A
2 of 8
ABS OLUT E MAX IMUM RAT INGS
PARAMETER
SYMBOL
V
DSS
V
GSS
RATINGS
60
±20
70
56
280
600
20
10
200
1.4
-55 ~ +150
-55 ~ +150
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
W/
Drain-Source Voltage
Gate to Source Voltage
T
C
= 25
T
C
= 100
Continuous Drain Current
I
D
Drain Current Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation (T
C
= 25
Derating Factor above 25
Operation Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
I
DM
E
AS
E
AR
dv/dt
)
P
D
T
J
T
STG
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JC
θ
CS
θ
JA
MIN
TYP
0.5
MAX
1.2
62.5
UNIT
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
ELECT RICAL CHARACT ERIS T ICS
(T
C
=25
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX
UNIT
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BV
DSS
V
GS
= 0 V, I
D
= 250 μA
60
V
BV
DSS
/
T
J
I
D
= 1mA, Referenced to 25
0.08
V/
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V,
T
J
= 150
V
GS
= 20V, V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
1
μA
Drain-Source Leakage Current
I
DSS
10
μA
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
100
-100
nA
nA
I
GSS
V
GS(TH)
V
DS
= V
GS
, I
D
= 250 μA
2.0
4.0
V
R
DS(ON)
V
GS
= 10 V, I
D
= 35 A
12
15
m
C
ISS
C
OSS
C
RSS
3300
530
80
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
12
79
80
52
90
20
30
ns
ns
ns
ns
nC
nC
nC
V
DD
= 30V, I
D
=70 A,
V
GS
=10V, (Note 4, 5)
140
35
45
V
DS
= 60V, V
GS
= 10 V
I
D
= 48A, (Note 4, 5)
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