參數(shù)資料
型號: 70TPS12PBF
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: 晶閘管
英文描述: 75 A, 1200 V, SCR, TO-274AA
封裝: LEAD FREE, SUPER-247, 3 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 90K
代理商: 70TPS12PBF
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93712
2
Revision: 02-Jun-08
70TPS.. High Voltage Series
Vishay High Power Products Phase Control SCR, 70 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
IT(AV)
TC = 82 °C, 180° conduction half sine wave
70
A
Maximum continuous RMS on-state
current as AC switch
IT(RMS)
Lead current limitation
75
Maximum peak, one-cycle
non-repetitive surge current
ITSM
10 ms sine pulse, rated VRRM applied
Initial TJ = TJ
maximum
1200
10 ms sine pulse, no voltage reapplied
1400
Maximum I2t for fusing
I2t
10 ms sine pulse, rated VRRM applied
7200
A2s
10 ms sine pulse, no voltage reapplied
10 200
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
102 000
A2
√s
Low level value of threshold voltage
VT(TO)1
TJ = 125 °C
0.916
V
High level value of threshold voltage
VT(TO)2
1.21
Low level value of on-state slope resistance
rt1
4.138
m
Ω
High level value of on-state slope resistance
rt2
3.43
Maximum peak on-state voltage
VTM
100 A, TJ = 25 °C
1.4
V
Maximum rate of rise of turned-on current
dI/dt
TJ = 25 °C
150
A/s
Maximum holding current
IH
TJ = 25 °C
200
mA
Maximum latching current
IL
400
Maximum reverse and direct leakage current
IRRM/IDRM
TJ = 25 °C
VR = Rated VRRM/VDRM
1.0
TJ = 125 °C
15
Maximum rate of rise of off-state voltage
dV/dt
TJ = 125 °C
500
V/s
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
T = 30 s
10
W
Maximum average gate power
PG(AV)
2.5
Maximum peak gate current
IGM
2.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum required DC gate
voltage to trigger
VGT
TJ = - 40 °C
Anode supply = 6 V resistive load
4.0
TJ = 25 °C
1.5
TJ = 125 °C
1.1
Maximum required DC gate current to trigger
IGT
TJ = - 40 °C
270
mA
TJ = 25 °C
100
TJ = 125 °C
80
Maximum DC gate voltage not to trigger
VGD
TJ = 120 °C, VDRM = Rated value
0.25
V
Maximum DC gate current not to trigger
IGD
6mA
相關(guān)PDF資料
PDF描述
70TPS16PBF 75 A, 1600 V, SCR, TO-274AA
70V657S12BFG8 32K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
71-570125-8P 8 CONTACT(S), ALUMINUM, CADMIUM PLATED, MALE, MIL SERIES CONNECTOR, SOLDER, RECEPTACLE
71-570125-8S 8 CONTACT(S), ALUMINUM, CADMIUM PLATED, FEMALE, MIL SERIES CONNECTOR, SOLDER, RECEPTACLE
71-570125-99P 23 CONTACT(S), ALUMINUM, CADMIUM PLATED, MALE, MIL SERIES CONNECTOR, SOLDER, RECEPTACLE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
70TPS12PBF_10 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control SCR, 70 A
70TPS16 功能描述:SCR 1600 Volt 75 Amp RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
70TPS16PBF 功能描述:SCR PHSE CTRL 75A 1600V SUPER247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> SCR - 單個 系列:- 其它有關(guān)文件:X00619 View All Specifications 產(chǎn)品目錄繪圖:SCR TO-92 Package 標(biāo)準(zhǔn)包裝:1 系列:- SCR 型:靈敏柵極 電壓 - 斷路:600V 電壓 - 柵極觸發(fā)器 (Vgt)(最大):800mV 電壓 - 導(dǎo)通狀態(tài) (Vtm)(最大):1.35V 電流 - 導(dǎo)通狀態(tài) (It (AV))(最大):500mA 電流 - 導(dǎo)通狀態(tài) (It (RMS))(最大):800mA 電流 - 柵極觸發(fā)電流 (Igt)(最大):200µA 電流 - 維持(Ih):5mA 電流 - 斷開狀態(tài)(最大):1µA 電流 - 非重復(fù)電涌,50、60Hz (Itsm):9A,10A 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:TO-226-3、TO-92-3(TO-226AA)成形引線 供應(yīng)商設(shè)備封裝:TO-92-3 包裝:剪切帶 (CT) 產(chǎn)品目錄頁面:1554 (CN2011-ZH PDF) 其它名稱:497-9067-1
70TR10 制造商:FCI 制造商全稱:First Components International 功能描述:70 Amp GPP PASSIVATED STUD POWER DIODE High Current Capability
70TR100 制造商:FCI 制造商全稱:First Components International 功能描述:70 Amp GPP PASSIVATED STUD POWER DIODE High Current Capability