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參數(shù)資料
| 型號(hào)： | 70TPS16PBF |
| 廠(chǎng)商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | 75 A, 1600 V, SCR, TO-274AA |
| 封裝： | LEAD FREE, SUPER-247, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 90K |
| 代理商： | 70TPS16PBF |
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93712
2
Revision: 02-Jun-08
70TPS.. High Voltage Series
Vishay High Power Products Phase Control SCR, 70 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
IT(AV)
TC = 82 °C, 180° conduction half sine wave
70
A
Maximum continuous RMS on-state
current as AC switch
IT(RMS)
Lead current limitation
75
Maximum peak, one-cycle
non-repetitive surge current
ITSM
10 ms sine pulse, rated VRRM applied
Initial TJ = TJ
maximum
1200
10 ms sine pulse, no voltage reapplied
1400
Maximum I2t for fusing
I2t
10 ms sine pulse, rated VRRM applied
7200
A2s
10 ms sine pulse, no voltage reapplied
10 200
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
102 000
A2
√s
Low level value of threshold voltage
VT(TO)1
TJ = 125 °C
0.916
V
High level value of threshold voltage
VT(TO)2
1.21
Low level value of on-state slope resistance
rt1
4.138
m
Ω
High level value of on-state slope resistance
rt2
3.43
Maximum peak on-state voltage
VTM
100 A, TJ = 25 °C
1.4
V
Maximum rate of rise of turned-on current
dI/dt
TJ = 25 °C
150
A/s
Maximum holding current
IH
TJ = 25 °C
200
mA
Maximum latching current
IL
400
Maximum reverse and direct leakage current
IRRM/IDRM
TJ = 25 °C
VR = Rated VRRM/VDRM
1.0
TJ = 125 °C
15
Maximum rate of rise of off-state voltage
dV/dt
TJ = 125 °C
500
V/s
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
T = 30 s
10
W
Maximum average gate power
PG(AV)
2.5
Maximum peak gate current
IGM
2.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum required DC gate
voltage to trigger
VGT
TJ = - 40 °C
Anode supply = 6 V resistive load
4.0
TJ = 25 °C
1.5
TJ = 125 °C
1.1
Maximum required DC gate current to trigger
IGT
TJ = - 40 °C
270
mA
TJ = 25 °C
100
TJ = 125 °C
80
Maximum DC gate voltage not to trigger
VGD
TJ = 120 °C, VDRM = Rated value
0.25
V
Maximum DC gate current not to trigger
IGD
6mA
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