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參數(shù)資料
| 型號(hào)： | 71061 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | P通道30 - V的肖特基二極管（副）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | 71061 |
Si4831DY
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 71061
S-61859—Rev. A, 10-Oct-99
Parameter
Device
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (t
10 sec)
a
MOSFET
R
thJA
52
62.5
C/W
Schottky
56
68
Maximum Junction-to-Ambient (t = steady state)
a
MOSFET
82
100
Schottky
91
110
MaximumJunction-to-Foot
Maximum Junction-to-Foot
MOSFET
R
thJF
27
33
Schottky
32
40
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec.
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –24 V, V
GS
= 0 V
V
DS
= –24 V, V
GS
= 0 V, T
J
= 75 C
V
DS
–5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –5 A
V
GS
= –4.5 V, I
D
=
–3.5 A
–1
A
–10
On-State Drain Current
a
I
D(on)
–20
A
Drain Source On State Resistance
a
Drain-Source On-State Resistance
r
DS(
)
0.036
0.045
0.060
0.090
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –15 V, I
D
= –5 A
I
S
= –1.7 A, V
GS
= 0 V
9
S
–0.75
–1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= –15 V V
V
GS
= –5 V, I
D
= –5 A
5 V I
10
20
Gate-Source Charge
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
4.5
nC
Gate-Drain Charge
3.6
Turn-On Delay Time
V
= –15 ,
= 15
1 A V
–1 A, V
GEN
= –10 V, R
G
= 6
13
25
Rise Time
I
D
10 V R
15
30
Turn-Off Delay Time
37
70
ns
Fall Time
14
30
Source-Drain Reverse Recovery Time
I
F
= –1.7 A, di/dt = 100 A/ s
35
70
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 3 A
0.485
0.53
V
I
F
= 3 A, T
J
= 125 C
V
r
= 30 V
V
r
= 30 V, T
J
= 75 C
V
r
= 30 V, T
J
= 125 C
V
r
= 15 V
0.42
0.47
Maximum Reverse Leakage Current
I
rm
0.008
0.1
0.4
5
mA
6.5
20
Junction Capacitance
C
T
102
pF
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