參數(shù)資料
型號(hào)： 71V016SA12PHGI8
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 64K X 16 STANDARD SRAM, 12 ns, PDSO44
封裝： 0.400 INCH, ROHS COMPLIANT, TSOP2-44
文件頁(yè)數(shù)： 3/9頁(yè)
文件大小： 283K
代理商： 71V016SA12PHGI8
6.42
3
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Symbol
Parameter
71V016SA10
71V016SA12
71V016SA15
71V016SA20
Unit
Com'l Only
Com'l
Ind
Com'l
Ind
Com'l
Ind
ICC
Dynamic Operating Current
CS
≤ VLC, Outputs Open, VDD = Max., f = fMAX(3)
Max.
160
150
160
130
120
mA
Typ.(4)
(5)
65
60
--
55
--
50
--
ISB
Dynamic Standby Power Supply Current
CS
≥ VHC, Outputs Open, VDD = Max., f = fMAX(3)
45
40
45
35
30
mA
ISB1
Full Standby Power Supply Current (static)
CS
≥ VHC, Outputs Open, VDD = Max., f = 0(3)
10
mA
3834 tbl 08
Absolute Maximum Ratings(1)
Recommended Operating
Temperature and Supply Voltage
DC Electrical Characteristics
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Recommended DC Operating
Conditions
DC Electrical Characteristics(1,2)
(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)
NOTE:
1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause
permanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperation
ofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperational
sections of this specification is not implied. Exposure to absolute maximum rating
conditionsforextendedperiodsmayaffectreliability.
NOTES:
1. For 71V016SA10 only.
2. For all speed grades except 71V016SA10.
3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
NOTE:
1. Thisparameterisguaranteedbydevicecharacterization,butnotproductiontested.
NOTES:
1. All values are maximum guaranteed values.
2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).
3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
4. Typical values are based on characterization data for H step only measured at 3.3V, 25°C and with equal read and write cycles.
Symbol
Rating
Value
Unit
VDD
Supply Voltage Relative to
VSS
–0.5 to +4.6
V
VIN, VOUT
Terminal Voltage Relative
to VSS
–0.5 to VDD+0.5
V
TBIAS
Temperature Under Bias
–55 to +125
o
C
TSTG
Storage Temperature
–55 to +125
o
C
PT
Power Dissipation
1.25
W
IOUT
DC Output Current
50
mA
3834 tbl 03
Grade
Temperature
VSS
VDD
Commercial
0°C to +70°C
0V
See Below
Industrial
-40°C to +85°C
0V
See Below
3834 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD(1)
Supply Voltage
3.15
3.3
3.6
V
VDD(2)
Supply Voltage
3.0
3.3
3.6
V
Vss
Ground
0
V
VIH
Input High Voltage
2.0
____
VDD+0.3(3)
V
VIL
Input Low Voltage
–0.3(4)
____
0.8
V
3834 tbl 05
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
6
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
3834 tbl 06
Symbol
Parameter
Test Condition
IDT71V016SA
Unit
Min.
Max.
|ILI|
Input Leakage Current
VDD = Max., VIN = VSS to VDD
___
5A
|ILO|
Output Leakage Current
VDD = Max., CS = VIH, VOUT = VSS to VDD
___
5A
VOL
Output Low Voltage
IOL = 8mA, VDD = Min.
___
0.4
V
VOH
Output High Voltage
IOH = –4mA, VDD = Min.
2.4
___
V
3834 tbl 07
相關(guān)PDF資料
PDF描述
71V2556XSA166BGI8 128K X 36 ZBT SRAM, PBGA119
71V2556S100PFG8 128K X 36 ZBT SRAM, 5 ns, PQFP100
71V65703S85BQ 256K X 36 ZBT SRAM, 8.5 ns, PBGA165
7204G1 2 CONTACT(S), MALE, POWER CONNECTOR, SOLDER, PLUG
7204G3 2 CONTACT(S), MALE, POWER CONNECTOR, SOLDER, PLUG
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
71V016SA12PHI 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II Tube
71V016SA12PHI8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II T/R
71V016SA12YG 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V016SA12YG8 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
71V016SA12YGI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*