
IRF7413
2
www.irf.com
Parameter
Min. Typ. Max. Units
16
–––
–––
44
–––
7.9
–––
9.2
–––
8.8
–––
8.0
–––
35
–––
14
–––
1670
–––
–––
670
–––
100
–––
2290
–––
–––
680
–––
1020
–––
Conditions
V
DS
= 10V, I
D
= 7.2A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
66 I
D
= 7.2A
–––
nC
–––
–––
–––
–––
–––
S
V
DS
= 24V
V
GS
= 10V,
V
DD
= 100V
I
D
= 7.2A
R
G
= 6.2
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 24V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 24V
–––
–––
pF
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
Max.
120
7.2
Units
mJ
A
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 7.2A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 7.2A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
–––
–––
–––
–––
50
74
1.0
75
110
V
ns
nC
Diode Characteristics
3.1
96
Static @ T
J
= 25
°
C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
m
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Parameter
Min. Typ. Max. Units
30
–––
–––
0.03
–––
–––
–––
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 7.2A
V
GS
= 4.5V, I
D
= 6.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 20V
V
GS
= -20V
Drain-to-Source Breakdown Voltage
–––
–––
11
18
–––
1.0
25
100
-100
V
V/
°
C
V
GS(th)
Gate Threshold Voltage
V
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA