參數(shù)資料
型號: 74AHCT273PW,118
廠商: NXP Semiconductors
文件頁數(shù): 9/13頁
文件大?。?/td> 0K
描述: IC OCT D FF POS-EDG TRIG 20TSSOP
產(chǎn)品培訓(xùn)模塊: Logic Packages
標(biāo)準(zhǔn)包裝: 1
系列: 74AHCT
功能: 主復(fù)位
類型: D 型總線
輸出類型: 非反相
元件數(shù): 1
每個元件的位元數(shù): 8
頻率 - 時鐘: 50MHz
延遲時間 - 傳輸: 5.8ns
觸發(fā)器類型: 正邊沿
輸出電流高,低: 8mA,8mA
電源電壓: 4.5 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 20-TSSOP(0.173",4.40mm 寬)
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: 568-7613-6
74AHC_AHCT273_3
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 13 May 2008
5 of 18
NXP Semiconductors
74AHC273; 74AHCT273
Octal D-type ip-op with reset; positive-edge trigger
6.
Functional description
[1]
H = HIGH voltage level;
h = HIGH voltage level one set-up time prior to the LOW-to-HIGH CP transition;
L = LOW voltage level;
l = LOW voltage level one set-up time prior to the LOW-to-HIGH CP transition;
↑ = LOW-to-HIGH;
X = don’t care.
7.
Limiting values
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For SO20 packages: above 70
°C the value of P
tot derates linearly at 8 mW/K.
For TSSOP20 packages: above 60
°C the value of P
tot derates linearly at 5.5 mW/K.
For DHVQFN20 packages: above 60
°C the value of Ptot derates linearly at 4.5 mW/K.
D6
17
data input
D7
18
data input
Q7
19
ip-op output
VCC
20
supply voltage
Table 2.
Pin description …continued
Symbol
Pin
Description
Table 3.
Function table[1]
Operating mode
Control
Input
Output
MR
CP
Dn
Qn
Reset (clear)
L
X
L
Load ‘1’
H
hH
Load ‘0’
H
lL
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.5
+7.0
V
VI
input voltage
0.5
+7.0
V
IIK
input clamping current
VI < 0.5 V
20
-
mA
IOK
output clamping current
VO < 0.5 V or VO >VCC + 0.5 V
20
+20
mA
IO
output current
VO = 0.5 V to (VCC + 0.5 V)
25
+25
mA
ICC
supply current
-
+75
mA
IGND
ground current
75
-
mA
Tstg
storage temperature
65
+150
°C
Ptot
total power dissipation
Tamb = 40 °C to +125 °C
500
mW
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