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參數(shù)資料
| 型號： | 74AUP1G0832GM,132 |
| 廠商： | NXP Semiconductors |
| 文件頁數(shù)： | 14/19頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC GATE AND/OR 3-IN 6-XSON |
| 產(chǎn)品培訓(xùn)模塊： | Logic Packages |
| 特色產(chǎn)品： | MicroPak? |
| 標(biāo)準(zhǔn)包裝： | 5,000 |
| 系列： | 74AUP |
| 邏輯類型： | 與/或門 |
| 電路數(shù)： | 1 |
| 輸入數(shù)： | 3 輸入（2，1） |
| 施密特觸發(fā)器輸入： | 是 |
| 輸出類型： | 單端 |
| 輸出電流高，低： | 4mA，4mA |
| 電源電壓： | 0.8 V ~ 3.6 V |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 6-XFDFN |
| 供應(yīng)商設(shè)備封裝： | 6-XSON，SOT886（1.45x1） |
| 包裝： | 帶卷 (TR) |
| 其它名稱： | 74AUP1G0832GM-H 74AUP1G0832GM-H-ND 935280619132 |
74AUP1G0832
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 22 June 2012
4 of 19
NXP Semiconductors
74AUP1G0832
Low-power 3-input AND-OR gate
7.1 Logic configurations
8.
Limiting values
[1]
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For SC-88 packages: above 87.5
°C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 118
°C the value of Ptot derates linearly with 7.8 mW/K.
Table 5.
Function selection table
Logic function
Figure
2-input AND
see Figure 5
2-input OR
3-input gate with the Boolean function: Y = (A
× B) + C
see Figure 8
Fig 5.
2-input AND gate
Fig 6.
2-input OR gate
001aad944
1
2
3
6
5
4Y
VCC
B
A
B
Y
001aad945
1
2
3
6
5
4Y
Y
C
B
C
VCC
Fig 7.
2-input OR gate
Fig 8.
3-input gate with the Boolean function:
Y=(A
× B) + C
001aad946
1
2
3
6
5
4Y
Y
C
A
C
VCC
001aad947
1
2
3
6
5
4Y
C
A
B
VCC
A
B
C
Y
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.5
+4.6
V
IIK
input clamping current
VI <0V
50
-
mA
VI
input voltage
0.5
+4.6
V
IOK
output clamping current
VO <0V
50
-
mA
VO
output voltage
Active mode and Power-down mode
0.5
+4.6
V
IO
output current
VO =0 Vto VCC
-
±20
mA
ICC
supply current
-
50
mA
IGND
ground current
50
-
mA
Tstg
storage temperature
65
+150
°C
Ptot
total power dissipation
Tamb =
40 °C to +125 °C
[2] -
250
mW
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