參數(shù)資料
型號: 74AUP1G885DC,125
廠商: NXP Semiconductors
文件頁數(shù): 1/23頁
文件大?。?/td> 0K
描述: IC GATE DUAL FUNCTION 8VSSOP
產(chǎn)品培訓模塊: Logic Packages
標準包裝: 3,000
系列: 74AUP
邏輯類型: 可配置多功能
電路數(shù): 1
輸入數(shù): 3
施密特觸發(fā)器輸入:
輸出類型: 單端
輸出電流高,低: 4mA,4mA
電源電壓: 0.8 V ~ 3.6 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-VFSOP(0.091",2.30mm 寬)
供應商設(shè)備封裝: 8-VSSOP,US8
包裝: 帶卷 (TR)
1.
General description
The 74AUP1G885 provides two functions in one device. The output state of the outputs
(1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean
function: 1Y = A
C. The output 2Y provides the Boolean function: 2Y = A B + A C.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
2.
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; ICC = 0.9 A (maximum)
Latch-up performance exceeds 100 mA per JESD78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Multiple package options
Specified from
40 Cto+85 C and 40 Cto+125 C
74AUP1G885
Low-power dual function gate
Rev. 9 — 31 January 2013
Product data sheet
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