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參數(shù)資料
| 型號： | 74F1071SCX |
| 英文描述： | COMMON ANODE DIODE ARRAY|SO |
| 中文描述： | 共陽極二極管陣列|蘇 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 81K |
| 代理商： | 74F1071SCX |
www.fairchildsemi.com
2
7
Absolute Maximum Ratings
(Note 1)
Recommended Operating
Conditions
Note 1:
Absolute maximum ratings are DC values beyond which the device
may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2:
Voltage ratings may be exceeded if current ratings and junction
temperature and power consumption ratings are not exceeded.
Note 3:
ESD Rating for Direct contact discharge using ESD Simulation
Tester. Higher rating may be realized in the actual application.
DC Electrical Characteristics
Storage Temperature
Ambient Temperature under Bias
Junction Temperature under Bias
Input Voltage (Note 2)
Input Current (Note 2)
ESD (Note 3)
Human Body Model
(MIL-STD-883D method 3015.7)
IEC 801-2
Machine Model (EIAJIC-121-1981)
DC Latchup Source Current
(JEDEC Method 17)
Package Power Dissipation @
+
70
°
C
SOIC Package
65
°
C to
+
150
°
C
65
°
C to
+
125
°
C
65
°
C to
+
150
°
C
0.5V to
+
6V
200 mA to
+
50 mA
±
10 kV
±
6 kV
±
2 kV
±
500 mA
800 mW
Free Air Ambient Temperature
Reverse Bias Voltage
Thermal Resistance (
θ
JA
in Free Air)
SOIC Package
SSOP Package
0
°
C to
+
70
°
C
0V to 5.25 V
DC
100
°
C/W
110
°
C/W
Symbol
Parameter
T
A
=
+
25
°
C
Typ
1.5
3
6.9
T
A
=
0
°
C to
+
70
°
C
Min
Units
Conditions
Min
Max
10
20
7.2
Max
50
100
7.7
I
IH
Input HIGH Current
μ
A
V
IN
=
5.25V; Untested Input @ GND
V
IN
=
5.5V; Untested Input @ GND
I
Z
=
1 mA; Untested Inputs @ GND
I
Z
=
50 mA; Untested Inputs @ GND
I
F
=
18 mA; Untested Inputs @ 5V
I
F
=
200 mA; Untested Inputs @ 5V
V
Z
Reverse Voltage
6.6
5.9
V
7.1
0.6
1.1
7.5
0.9
1.5
3
8.0
0.9
1.5
V
F
Forward Voltage
0.3
0.5
0.3
0.5
V
I
CT
C
IN
Adjacent Input Crosstalk
Input Capacitance
(small signal @ 1 MHz)
%
25
13
pF
V
BIAS
=
0 V
DC
V
BIAS
=
5 V
DC
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