參數(shù)資料
型號： 74HC1G66GW-T
廠商： NXP SEMICONDUCTORS
元件分類： 多路復用及模擬開關(guān)
英文描述： 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO5
封裝： 1.25 MM, PLASTIC, SOT-353, MO-203, SC-88A, TSSOP-5
文件頁數(shù)： 17/18頁
文件大?。?/td> 107K
代理商： 74HC1G66GW-T
74HC_HCT1G66_4
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 19 December 2008
8 of 18
NXP Semiconductors
74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
[1]
All typical values are measured at Tamb =25 °C.
[2]
tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[3]
CPD is used to determine the dynamic power dissipation PD (W).
PD =CPD × VCC2 × fi + Σ ((CL × CSW) × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
CSW = maximum switch capacitance in pF (see Table 7);
VCC = supply voltage in Volt;
Σ ((C
L × CSW) × VCC
2
× f
o) = sum of outputs.
tdis
disable time
E to Y or Z; see Figure 9
VCC = 2.0 V
-
27
190
-
225
ns
VCC = 4.5 V
-
16
38
-
45
ns
VCC = 5.0 V; CL =15pF
-
11
-
ns
VCC = 6.0 V
-
14
33
-
38
ns
VCC = 9.0 V
-
12
16
-
20
ns
CPD
power dissipation
capacitance
VI = GND to VCC
-9-
-
pF
74HCT1G66
tpd
propagation delay Y to Z or Z to Y; RL = ∞;
VCC = 4.5 V
-
3
15
-
18
ns
ten
enable time
E to Y or Z; see Figure 9
VCC = 4.5 V
-
15
30
-
36
ns
VCC = 5.0 V; CL =15pF
-
12
-
ns
tdis
disable time
E to Y or Z; see Figure 9
VCC = 4.5 V
-
13
44
-
53
ns
VCC = 5.0 V; CL =15pF
-
12
-
ns
CPD
power dissipation
capacitance
VI = GND to VCC 1.5 V
-9-
-
pF
Table 9.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); CL = 50 pF; RL =1 k, unless otherwise specied;
For test circuit see Figure 10.
Symbol Parameter
Conditions
40 °C to +85 °C
40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
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