參數(shù)資料
型號(hào): 74HCT1G125GW,125
廠商: NXP Semiconductors
文件頁數(shù): 15/16頁
文件大小: 0K
描述: IC BUS BUFF DVR TRI-ST 5TSSOP
產(chǎn)品培訓(xùn)模塊: Logic Packages
標(biāo)準(zhǔn)包裝: 1
系列: 74HCT
邏輯類型: 緩沖器/線路驅(qū)動(dòng)器,非反相
元件數(shù): 1
每個(gè)元件的位元數(shù): 1
輸出電流高,低: 6mA,6mA
電源電壓: 4.5 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 6-TSSOP(5 引線),SC-88A,SOT-353
供應(yīng)商設(shè)備封裝: 5-TSSOP
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁面: 838 (CN2011-ZH PDF)
其它名稱: 568-4582-6
74HC_HCT1G125_5
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 23 December 2005
8 of 16
Philips Semiconductors
74HC1G125; 74HCT1G125
Bus buffer/line driver; 3-state
12. Dynamic characteristics
[1]
All typical values are measured at Tamb = 25 °C.
[2]
CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
Table 10:
Dynamic characteristics 74HC1G125
Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specied; for test
circuit see Figure 8
Symbol Parameter
Conditions
Min
Typ
Max Unit
Tamb = 40 °C to +85 °C [1]
tPHL,
tPLH
propagation delay A to Y
VCC = 2.0 V
-
24
125
ns
VCC = 4.5 V
-
10
25
ns
VCC =5V;
CL =15pF
-9
-
ns
VCC = 6.0 V
-
8
21
ns
tPZH,
tPZL
3-state output enable time
OE to Y
VCC = 2.0 V
-
19
155
ns
VCC = 4.5 V
-
9
31
ns
VCC = 6.0 V
-
7
26
ns
tPHZ,
tPLZ
3-state output disable time
OE to Y
VCC = 2.0 V
-
18
155
ns
VCC = 4.5 V
-
12
31
ns
VCC = 6.0 V
-
11
26
ns
CPD
power dissipation
capacitance
VI = GND to VCC
[2] -30
-
pF
Tamb = 40 °C to +125 °C
tPHL,
tPLH
propagation delay A to Y
VCC = 2.0 V
-
150
ns
VCC = 4.5 V
-
30
ns
VCC = 6.0 V
-
26
ns
tPZH,
tPZL
3-state output enable time
OE to Y
VCC = 2.0 V
-
190
ns
VCC = 4.5 V
-
38
ns
VCC = 6.0 V
-
32
ns
tPHZ,
tPLZ
3-state output disable time
OE to Y
VCC = 2.0 V
-
190
ns
VCC = 4.5 V
-
38
ns
VCC = 6.0 V
-
32
ns
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