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參數(shù)資料
| 型號： | 74S473 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | (512 x 8) 4096-Bit TTL PROM |
| 中文描述： | （512 × 8）4096位TTL胎膜早破 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 126K |
| 代理商： | 74S473 |
AC Electrical Characteristics
with Standard Load and Operating Conditions
COMMERCIAL TEMP. RANGE
(0
§
C to
a
70
§
C)
Symbol
JEDEC
Symbol
Parameter
DM74S473
DM74S473A
Units
Min
Typ
Max
Min
Typ
Max
TAA
TAVQV
Address Access Time
40
60
25
45
ns
TEA
TEVQV
Enable Access Time
15
30
15
30
ns
TER
TEXQX
Enable Recovery Time
15
30
15
30
ns
TZX
TEVQX
Output Enable Time
15
30
15
30
ns
TXZ
TEXQZ
Output Disable Time
15
30
15
30
ns
Functional Description
TESTABILITY
The Schottky PROM die includes extra rows and columns of
fusable links for testing the programmability of each chip.
These test fuses are placed at the worst-case chip locations
to provide the highest possible confidence in the program-
ming tests in the final product. A ROM pattern is also per-
manently fixed in the additional circuitry and coded to pro-
vide a parity check of input address levels. These and other
test circuits are used to test for correct operation of the row
and column-select circuits and functionality of input and en-
able gates. All test circuits are available at both wafer and
assembled device levels to allow 100% functional and para-
metric testing at every stage of the test flow.
RELIABILITY
As with all National products, the Ti-W PROMs are subject-
ed to an on-going reliability evaluation by the Reliability As-
surance Department. These evaluations employ accelerat-
ed life tests, including dynamic high-temperature operating
life, temperature-humidity life, temperature cycling, and ther-
mal shock. To date, nearly 7.4 million Schottky Ti-W PROM
device hours have been logged, with samples in Epoxy B
molded DIP (N-package), PLCC (V-package) and CERIP (J-
package). Device performance in all package configurations
is excellent.
TITANIUM-TUNGSTEN FUSES
National’s Programmable Read-Only Memories (PROMs)
feature titanuim-tungsten (Ti-W) fuse links designed to pro-
gram efficiently with only 10.5V applied. The high perform-
ance and reliability of these PROMs are the result of fabrica-
tion by a Schottky bipolar process, of which the titanium-
tungsten metallization is an integral part, and the use of an
on-chip programming circuit.
A major advantage of the titanium-tungsten fuse technology
is the low programming voltage of the fuse links. At 10.5V,
this virtually eliminates the need for guard-ring devices and
wide spacings required for other fuse technologies. Care is
taken, however, to minimize voltage drops across the die
and to reduce parasitics. The device is designed to ensure
that worst-case fuse operating current is low enough for
reliable long-term operation. The Darlington programming
circuit is liberally designed to insure adequate power density
for blowing the fuse links. The complete circuit design is
optimized to provide high performance over the entire oper-
ating ranges of V
CC
and temperature.
4
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