參數(shù)資料
型號: 7782
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory
中文描述: 32兆位(含2Mb × 16,雙行,突發(fā))1.8V電源快閃記憶體
文件頁數(shù): 37/63頁
文件大?。?/td> 435K
代理商: 7782
37/63
M58CR032C, M58CR032D
Table 21. Asynchronous Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of E without increasing t
ELQV
.
Symbol
Alt
Parameter
Test Condition
M58CR032
Unit
85
100
120
Min
Max
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next
Address Valid
E = V
IL
, G = V
IL
85
100
120
ns
t
AVLH
t
AVAVDH
Address valid to Latch
Enable High
G = V
IH
10
10
10
ns
t
AVQV
t
ACC
Address Valid to Output
Valid (Random)
E = V
IL
, G = V
IL
85
100
120
ns
t
AVQV1
t
PAGE
Address Valid to Output
Valid (Page)
E = V
IL
, G = V
IL
35
45
45
ns
t
EHQX
t
OH
Chip Enable High to
Output Transition
G = V
IL
0
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to
Output Hi-Z
G = V
IL
20
20
20
ns
t
ELLH
t
ELAVDH
Chip Enable Low to
Latch Enable High
E = V
IL
, G = V
IH
10
10
10
ns
t
ELQV
(2)
t
CE
Chip Enable Low to
Output Valid
G = V
IL
85
100
120
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to
Output Transition
G = V
IL
0
0
0
ns
t
GHQX
t
OH
Output Enable High to
Output Transition
E = V
IL
0
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to
Output Hi-Z
E = V
IL
20
20
20
ns
t
GLQV
(2)
t
OE
Output Enable Low to
Output Valid
E = V
IL
25
25
35
ns
t
GLQX
(1)
t
OLZ
Output Enable Low to
Output Transition
E = V
IL
0
0
0
ns
t
LHAX
t
AVDHAX
Latch Enable High to
Address Transition
E = V
IL
, G = V
IH
10
10
10
ns
t
LLLH
t
AVDLAVDH
Latch Enable Pulse
Width
E = V
IL
, G = V
IH
10
10
10
ns
t
LLQV
t
AVDLQV
Latch Enable Low to
Output Valid (Random)
E = V
IL
85
100
120
ns
t
LLQV1
Latch Enable Low to
Output Valid (Page)
E = V
IL
35
45
45
ns
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