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參數(shù)資料
| 型號(hào)： | 7AHCT541PWDH |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Octal buffer/line driver; 3-state |
| 中文描述： | 八路緩沖器/線路驅(qū)動(dòng)器，3態(tài) |
| 文件頁(yè)數(shù)： | 2/16頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | 7AHCT541PWDH |
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1999 Nov 24
2
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
74AHC541; 74AHCT541
FEATURES
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V
Balanced propagation delays
All inputs have a Schmitt-trigger action
Inputs accepts voltages higher than V
CC
For AHC only: operates with CMOS input levels
For AHCT only: operates with TTL input levels
Specified from
40 to +85
°
C and
40 to +125
°
C.
DESCRIPTION
The 74AHC/AHCT541 is a high-speed Si-gate CMOS
device.
The 74AHC/AHCT541 are octal non-inverting buffer/line
drivers with 3-state bus compatible outputs.
The 3-state outputs are controlled by the output enable
inputs OE
0
and OE
1
.
A HIGH on OE
n
causes the outputs to assume a
high-impedance OFF-state.
QUICK REFERENCE DATA
Ground = 0 V; T
amb
= 25
°
C; t
r
= t
f
≤
3.0 ns.
Notes
1.
C
PD
is used to determine the dynamic power dissipation (P
D
in
μ
W).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
The condition is V
I
= GND to V
CC
.
2.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC
AHCT
t
PHL
/t
PLH
C
I
C
O
C
PD
propagation delay A
n
to Y
n
input capacitance
output capacitance
power dissipation capacitance
C
L
= 15 pF; V
CC
= 5 V
V
I
= V
CC
or GND
3.5
3
4.0
10
3.5
3
4.0
12
ns
pF
pF
pF
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
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