參數(shù)資料
型號(hào): 7C256-35
廠商: Alliance Semiconductor Corporation
英文描述: High Performance 32Kx8 CMOS SRAM
中文描述: 高性能32Kx8 CMOS SRAM的
文件頁數(shù): 3/8頁
文件大?。?/td> 125K
代理商: 7C256-35
AS7C256
AS7C256L
3
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
GND
4.5
5.0
5.5
V
0.0
0.0
0.0
V
Input Voltage
V
IH
V
IL
2.2
V
CC
+1
0.8
V
–0.5*
V
*V
IL
min = –3.0V for pulse width less than t
RC
/2.
Parameter
Symbol Test Conditions
-10
-12
-15
-20
-25
-35
Unit
Min Max Min Max Min Max Min Max Min Max Min Max
Input Leakage
Current
|
I
LI
|
V
CC
= Max,
V
in
= GND to V
CC
CE = V
IH
, V
CC
= Max,
V
out
= GND to V
CC
1
1
1
1
1
1
μ
A
Output Leakage
Current
|
I
LO
|
1
1
1
1
1
1
μ
A
Operating Power
Supply Current
I
CC
CE = V
IL
,
f
=
f
max,
I
out
= 0 mA
120
115
110
100
90
80
mA
L
115
110
105
95
85
75
mA
Standby
Power Supply
Current
I
SB
CE = V
IH
,
f
=
f
max
45
40
30
30
25
25
mA
L
40
35
25
25
20
20
mA
I
SB1
CE > V
CC
–0.2V,
f
= 0,
V
in
0.2V
or
V
in
V
CC
–0.2V
I
OL
= 8 mA, V
CC
= Min
I
OH
= –4 mA, V
CC
= Min
2.0
2.0
2.0
2.0
2.0
2.0
mA
L
0.5
0.5
0.5
0.5
0.5
0.5
mA
Output Voltage
V
OL
V
OH
0.4
0.4
0.4
0.4
0.4
0.4
V
2.4
2.4
2.4
2.4
2.4
2.4
V
Parameter
Symbol
Signals
Test Conditions
Max
Unit
Input Capacitance
C
IN
C
I/O
A, CE, WE, OE
V
in
= 0V
V
in
= V
out
= 0V
5
pF
I/O Capacitance
I/O
7
pF
RECOMMENDED OPERATING CONDITIONS
(T
a
= 0°C to +70°C)
DC OPERATING CHARACTERISTICS
(V
CC
= 5V
±
10%, GND = 0V, T
a
= 0°C to +70°C)
1
CAPACITANCE
(
f
= 1 MHz, T
a
= Room Temperature, V
CC
= 5V)
2
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