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參數(shù)資料
| 型號： | 7MBP100RA-120 |
| 英文描述： | 8 PIN, 3.5KB FLASH, 128 RAM, 6 I/O, -40C to +125C, 8-DFN, T/R |
| 中文描述： | IGBT的 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 462K |
| 代理商： | 7MBP100RA-120 |
7MBP 100RA-120
IGBT IPM
1200V
6x100A+Chopper
Intelligent Power Module ( R-Series )
I
Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25°C
)
Items
Symbols
Ratings
Units
Min.
Max.
900
1000
800
1200
100
200
100
735
50
100
50
400
20
DC Bus Voltage
DC Bus Voltage (surge)
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Collector
Current
Collector Power Dissipation
Dynamic Brake
Collector Current
Forward Current of Diode
Collector Power Dissi. DB
Voltage of Power Supply for Driver
Input Signal Voltage
Input Signal Current
Alarm Signal Voltage
Alarm Signal Current
Junction Temperature
Operating Temperature
Storage Temperature
Isolation Voltage
V
DC
V
DC(Surge)
V
SC
V
CES
I
C
I
CP
-I
C
P
C
I
C
I
CP
I
F
P
C
V
CC
V
IN
I
IN
V
ALM
I
ALM
T
j
T
OP
T
stg
V
iso
Mounting *1
Terminals *1
0
0
200
0
Continuous
1ms
Duty=62.6%
One Transistor
Continuous
1ms
A
W
A
One Transistor
W
0
0
V
Z
1
V
CC
15
150
100
125
2500
3.5
3.5
mA
V
mA
0
-20
-40
°C
A.C. 1min.
V
Note:
*1:
Recommendable Value; 2.5
～
3.0 Nm (M5)
Electrical Characteristics of Power Circuit
( at T
j
=25°C, V
CC
=15V )
Items
Collector Current At Off Signal Input
INV
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Collector Current At Off Signal Input
DB
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Symbols
I
CES
V
CE(Sat)
V
F
I
CES
V
CE(Sat)
V
F
Conditions
Min.
Typ.
Max.
1.0
2.6
3.0
1.0
2.6
3.3
Units
mA
V
V
mA
V
V
V
CE
=1200V,
Input Termnal Open
I
C
=100A
-I
C
=100A
V
CE
=1200V,
Input Termnal Open
I
C
=50A
-I
C
=50A
Electrical Characteristics of Control Circuit
( at T
j
=25°C, V
CC
=15V )
Items
Current of P-Line Side Driver
(One Unit)
Current of N-Line Side Driver
(Three Units)
Symbols
I
CCP
I
CCN
Conditions
Min.
Typ.
Max.
Units
f
SW
=0~15kHz, T
C
=-20~100°C
f
SW
=0~15kHz, T
C
=-20~100°C
On
Off
R
IN
=20k
V
DC
=0V, I
C
=0A, Case Temp.
3
18
65
10
1.00
1.70
1.35
2.05
8.0
1.70
2.40
V
Input Zener Voltage
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
DB Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
Under Voltage Protection Level
Hysteresis
V
Z
T
COH
T
CH
T
jOH
T
jH
I
OC
I
OC
t
DOC
t
ALM
R
ALM
V
UV
V
H
110
125
20
Surface Of IGBT Chip
150
20
T
j
=125°C
T
j
=125°C
T
j
=25°C
150
75
10
2
1500
μs
ms
1.5
1425
11.0
0.2
1575
12.5
Dynamic Characteristics
( at T
C
=T
j
=125°C, V
CC
=15V )
Items
Symbols
t
ON
t
OFF
t
RR
Conditions
Min.
0.3
Typ.
Max.
Units
I
C
=100A, V
DC
=600V
Switching Time
3.6
0.4
μs
I
F
=100A, V
DC
=600V
I
Outline Drawing
Screw Torque
V
IN(th)
Input Signal Threshold Voltage
V
V
Nm
mA
°C
A
V
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相關(guān)代理商/技術(shù)參數(shù) |
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