參數(shù)資料
型號: 7MBP100RTB-060
英文描述: 8 Pin, 3.5KB Std Flash, 128 RAM, 6 I/O, -40C to +85C, 8-DFN, T/R
中文描述: 7 IGBT的綜合防治
文件頁數(shù): 3/7頁
文件大?。?/td> 462K
代理商: 7MBP100RTB-060
7MBP 100RA-120
IGBT IPM
1200V
6x100A+Chopper
I
Dynamic Brake
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0
20
40
60
80
100
V
CC
=17V,15V, 13V
Collector Current vs. Collector-Emitter Voltage
T
j
=25°C
C
C
Collector-Emitter Voltage : V
CE
[V]
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0
20
40
60
80
100
V
CC
=17V,15V, 13V
Collector Current vs. Collector-Emitter Voltage
T
j
=125°C
C
C
Collector-Emitter Voltage : V
CE
[V]
10
-3
10
-2
10
-1
10
0
10
-2
10
-1
10
0
IGBT
Transient Thermal Resistance
T
t
Pulse Width : P
W
[sec]
0
200
400
600
800
1000
1200
1400
0
100
200
300
400
500
600
700
RBSOA
(repetitive pulse)
SCSOA
(non-repetitive pulse)
Reverse Biased Safe Operating Area
V
CC
=15V, T
j
<125°C
C
C
Collector-Emitter Voltage : V
CE
[V]
0
20
40
60
80
100
120
140
160
0
100
200
300
400
500
Power Derating For IGBT
(per device)
C
C
Case Temperature : T
C
[°C]
0
20
40
60
80
100
120
140
0
50
100
150
200
Over Current Protection vs. Junction Temperature
V
cc
=15 V
O
o
Junction Temperature: T
j
[°C]
相關(guān)PDF資料
PDF描述
7MBP100RTJ-060 8 pin PIC w/CCP/PWM, 10 bit A2D, comparator, midrange core, 2K words flash, -40C to +85C, 8-SOIC 150mil, T/R
7MBP100TEA-060 7 IPM IGBT
7MBP150RA-120 7 IPM IGBT
7MBP150RTB-060 8 PIN, 1.75KB, FLASH, 64B RAM, COMPARATOR, 8 MHZ INTERNAL OSCILLATOR, -40C to +85C, 8-SOIC 150mil, TUBE
7MBP150RTJ-060 8 PIN, 1.75KB, FLASH, 64B RAM, COMPARATOR, 8MHZ INTERNAL OSCILLATOR, -40C to +85C, 8-DFN, T/R
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
7MBP100RTJ-060 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBTs
7MBP100TEA060 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Econo IPM series 600V / 100A 7 in one-package
7MBP100TEA-060 制造商:未知廠家 制造商全稱:未知廠家 功能描述:7 IPM IGBT
7MBP100VDA060-50 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE (V series) 600V / 100A / IPM
7MBP100VDA120-50 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE (V series) 1200V / 100A / IPM