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參數(shù)資料
| 型號： | 7MBR100SB-060 |
| 英文描述： | MCU CMOS 14LD 1K 20MHz, -40C to +85C, 14-PDIP, TUBE |
| 中文描述： | IGBT的 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 833K |
| 代理商： | 7MBR100SB-060 |
H04-004-03a
15
MS6M 0802
a
10
Vcc=300V
，
Ic=100A
，
Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
[ Inverter ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
[ Inverter ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
0
50
100
150
200
250
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10
8V
0
50
100
150
200
250
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
50
100
150
200
250
0
1
2
3
4
C
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
C
Gate - Emitter voltage : VGE [ V ]
Ic=200A
Ic=100A
Ic= 50A
0.10
1.00
10.00
100.00
0
10
20
30
C
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
100
200
300
400
500
0
100
200
300
400
500
0
5
10
15
20
25
C
Gate charge : Qg [ nC ]
VGE
VCE
G
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 7MBR100SB060_10 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
| 7MBR100SB060-01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT Module |
| 7MBR100SB-060-50 | 制造商:Fuji Electric 功能描述:PIM 7PK IGBT MOD +I/P BR 100A 600V PT |
| 7MBR100SD060 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:PIM/Built-in converter with thyristor and brake (600V / 100A / PIM) |
| 7MBR100U2B060 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE (U series) 600V / 100A / PIM |
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