參數(shù)資料
型號(hào): 7MBR100U2B-060(P)
英文描述: MCU CMOS 14LD 1K 20MHz, -40C to +85C, 14-SOIC 150mil, TUBE
中文描述: IGBT的
文件頁(yè)數(shù): 10/15頁(yè)
文件大?。?/td> 833K
代理商: 7MBR100U2B-060(P)
H04-004-03a
15
MS6M 0802
a
10
Vcc=300V
,
Ic=100A
,
Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
[ Inverter ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
[ Inverter ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
0
50
100
150
200
250
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10
8V
0
50
100
150
200
250
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
50
100
150
200
250
0
1
2
3
4
C
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
C
Gate - Emitter voltage : VGE [ V ]
Ic=200A
Ic=100A
Ic= 50A
0.10
1.00
10.00
100.00
0
10
20
30
C
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
100
200
300
400
500
0
100
200
300
400
500
0
5
10
15
20
25
C
Gate charge : Qg [ nC ]
VGE
VCE
G
相關(guān)PDF資料
PDF描述
7MBR100UB-120 MCU CMOS 14LD 1K EPRM, -40C to +125C, 14-SOIC 150mil, T/R
7MBR10KA-060 MCU CMOS 14LD 1K 20MHz, 0C to +70C, 14-SOIC 150mil, T/R
7MBR10NE-120 MCU CMOS 14LD 1K EPRM, 0C to +70C, 14-PDIP, TUBE
7MBR10NF-120 MCU CMOS 14LD 1K EPRM, -40C to +85C, 14-SOIC 150mil, TUBE
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