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參數(shù)資料
| 型號(hào)： | 7MBR100UB-120 |
| 英文描述： | MCU CMOS 14LD 1K EPRM, -40C to +125C, 14-SOIC 150mil, T/R |
| 中文描述： | IGBT的 |
| 文件頁(yè)數(shù)： | 9/15頁(yè) |
| 文件大?。?/td> | 833K |
| 代理商： | 7MBR100UB-120 |
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H04-004-03a
15
MS6M 0802
a
9
Reliability Test Results
Test
cate-
gorie
s
Test items
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of test
sample
Number
of
failure
sample
1 Terminal Strength
(Pull test)
2 Mounting Strength
Test Method 401
Method
Ⅰ
Test Method 402
method
Ⅱ
5
0
5
0
3 Vibration
Test Method 403
Condition code B
Test Method 404
Condition code B
5
0
4 Shock
5
0
5 Solderabitlity
Test Method 303
Condition code A
Test Method 302
Condition code A
Test Method 201
5
0
6 Resistance to Soldering Heat
5
0
1 High Temperature Storage
5
0
2 Low Temperature Storage
Test Method 202
5
0
3 Temperature Humidity
Storage
4 Unsaturated
Pressure Cooker
5 Temperature Cycle
Test Method 103
Test code C
Test Method 103
Test code E
Test Method 105
5
0
5
0
5
0
6 Thermal Shock
Test Method 307
method
Ⅰ
Condition code A
5
0
1 High temperature Reverse Bias
Test Method 101
5
0
2 High temperature Bias
( for gate )
3 Intermitted Operating Life
(Power cycling)
( for IGBT )
Test Method 101
5
0
Test Method 106
5
0
E
T
M
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 7MBR10KA-060 | MCU CMOS 14LD 1K 20MHz, 0C to +70C, 14-SOIC 150mil, T/R |
| 7MBR10NE-120 | MCU CMOS 14LD 1K EPRM, 0C to +70C, 14-PDIP, TUBE |
| 7MBR10NF-120 | MCU CMOS 14LD 1K EPRM, -40C to +85C, 14-SOIC 150mil, TUBE |
| 7MBR10SA-140 | MCU CMOS 18LD .5K 10MHz, 0C to +70C, 18-PDIP, TUBE |
| 7MBR10UE-120 | MCU CMOS 20LD .5K 10MHz, 0C to +70C, 20-SSOP 208mil, TUBE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 7MBR100VN120-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
| 7MBR100VP-060-50 | 制造商:Fuji Electric 功能描述:IGBT 7 PK V SER 100A 600V M719 |
| 7MBR100VP060-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
| 7MBR100VR120-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
| 7MBR100VX120-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
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