參數(shù)資料
型號(hào)： 7MBR10NF-120
英文描述： MCU CMOS 14LD 1K EPRM, -40C to +85C, 14-SOIC 150mil, TUBE
中文描述： IGBT的7個(gè)人信息管理
文件頁(yè)數(shù)： 5/15頁(yè)
文件大?。?/td> 833K
代理商： 7MBR10NF-120
H04-004-03a
15
MS6M 0802
a
5
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
-
1.0
-
mA
-
-
C
Reverse current
IRRM
VR=800V
T = 25°C
T =100°C
1.50
-
V
VFM
Gate-Emitter
leakage current
chip
-
1.10
Forward on voltage
VGE=0V
IF = 100A
teminal
-
1.20
1.0
mA
IRRM
Reverse current
VR=600V
-
-
0.42
0.03
0.45
toff
tf
Rg = 68
-
-
μs
tr
Ic = 50A
VGE=±15V
-
0.24
0.60
1.20
-
Turn-on time
ton
Vcc = 300V
-
0.42
1.20
Collector-Emitter
saturation voltage
VCE(sat)
(
terminal)
VGE=15V
VCE(sat)
(chip)
Ic = 50A
Tj= 25°C
Tj=125°C
-
-
-
-
2.10
2.40
1.85
2.15
2.40
-
-
nA
VGE=±20V
Tj= 25°C
Tj=125°C
V
Forward on voltage
VF
(terminal)
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Ic = 100A
VGE=15V
Tj= 25°C
IGES
VCE = 0V
VCE = 600V
ICES
K
3305
3375
3450
T = 25/50°C
T
Resistance
R
B
495
B value
V
-
-
7.7
V
2.60
-
-
nA
1.0
mA
200
-
-
-
-
-
VCE = 600V
VCE = 0V
VGE=±20V
6.7
VGE = 0V
Ic = 100mA
VCE = 20V
-
0.22
0.16
0.07
2.10
2.40
-
6.2
2.00
8.4
0.51
-
-
1.85
-
-
1.20
0.45
2.40
-
-
μs
nF
1.20
0.60
-
trr
2.30
2.50
-
-
-
-
VF
(chip)
-
-
-
IF = 100A
465
-
V
1.65
-
1.60
520
-
-
200
1.0
-
μs
IF = 100A
VGE = 0V
5000
0.35
mA
-
Reverse recovery time
Zero gate voltage
Collector current
B
Turn-off time
IGES
Zero gate voltage
Collector current
ICES
ton
tr
Cies
Input capacitance
Collector-Emitter
saturation voltage
VCE(sat)
(
terminal)
VCE(sat)
(chip)
Gate-Emitter
threshold voltage
0.58
-
tr (i)
toff
VCE=10V,VGE=0V,f=1MHz
Vcc = 300V
Ic = 100A
VGE=±15V
Rg = 33
Turn-off time
Turn-on time
I
VGE(th)
tf
VGE=0V
Units
Items
Symbols
Conditions
Characteristics
typ.
min.
max.
Gate-Emitter
leakage current
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