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參數(shù)資料
| 型號(hào)： | 7MBR10UE-120 |
| 英文描述： | MCU CMOS 20LD .5K 10MHz, 0C to +70C, 20-SSOP 208mil, TUBE |
| 中文描述： | IGBT的7個(gè)人信息管理 |
| 文件頁(yè)數(shù)： | 4/15頁(yè) |
| 文件大小： | 833K |
| 代理商： | 7MBR10UE-120 |
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H04-004-03a
15
MS6M 0802
a
4
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified
）
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5~3.5 Nm (M5)
A
Io
C
A
2
s
I
2
t
Tj
I
2
t (Non-Repetitive)
Junction temperature
700
2450
150
Surge Current (Non-Repetitive)
IFSM
A
V
50Hz/60Hz
sine wave
Tj=150°C, 10ms
half sine wave
Average Output Current
Repetitive peak reverse Voltage
VRRM
800
100
V
B
Collector Power Dissipation
Repetitive peak reverse Voltage (Diode)
Pc
1 device
187
600
VRRM
A
Collector current
Icp
1ms
100
W
Gate-Emitter voltage
VGES
Ic
±20
50
Viso
Continuous
Collector Power Dissipation
Collector-Emitter voltage
VGES
Ic
Icp
-Ic
-Ic pulse
Pc
VCES
1ms
1 device
Continuous
1ms
Items
Symbols
Conditions
VCES
I
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
600
±20
100
200
100
200
378
600
V
VAC
N m
3.5
-40 ~ +125
-
Tstg
Mounting *3
between terminal and copper base *1
between thermistor and others *2
Storage temperature
Isolation
voltage
Units
Maximum
Ratings
A
°C
W
V
V
V
2500
AC : 1min.
Screw
Torque
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|---|---|
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