參數(shù)資料
型號: 7MBR25NE-120
英文描述: MCU CMOS 18LD .5K EPRM, -40C to +85C, 18-PDIP, TUBE
中文描述: IGBT的7個人信息管理
文件頁數(shù): 2/4頁
文件大?。?/td> 74K
代理商: 7MBR25NE-120
MT6M04460
3. Absolute Maximum Ratings ( at Tc= 25
o
C unless otherwise specified)
Items
Symbols
Conditions
Maximum
Ratings
600
±20
20
36
40
72
20
105
600
±20
20
25
40
50
80
Units
Collector-Emitter voltage
Gate-Emitter voltage
V
CES
V
GES
Ic
V
V
A
Continuous
Tc=TBD
Tc=25
o
C
Tc=TBD
Tc=25
o
C
Tc=TBD
Collector current
Icp
1ms
A
-Ic
Pc
Continuous
1 device
A
W
V
V
A
Collector Power Dissipation
Collector-Emitter voltage
Gate-Emitter voltage
V
CES
V
GES
Ic
Continuous
Tc=TBD
Tc=25
o
C
Tc=TBD
Tc=25
o
C
Collector current
Icp
1ms
A
Collector Power Dissipation
Pc
1 device
50Hz/60Hz
sine wave
Tj=150
o
C,10ms
half sine wave
W
Average Output Current
Io
20
A
Surge Current (Non-Repetitive)
I
2
t (Non-Repetitive)
Junction temperature
Storage temperature
Isolation
between terminal and copper base
(*1)
voltage
between thermistor and others
(*2)
Mounting Screw Torque
(*1) All terminals should be connected together when isolation test will be done.
(*2) Terminal T1 and T2 should be connected together. And another terminals
should be connected together and shorted to copper base.
I
FSM
I
2
t
Tj
Tstg
Viso
105
55
150
A
A
2
s
o
C
o
C
V
V
N.m
-40~ +125
2500
2500
1.3
AC : 1min.
M4
1.7
I
C
B
相關(guān)PDF資料
PDF描述
7MBR25NF120 MCU CMOS 20LD .5K EPRM, -40C to +85C, 20-SSOP 208mil, TUBE
7MBR25NF-120 MCU CMOS 18LD .5K EPRM, 0C to +70C, 18-SOIC 300mil, T/R
7MBR25SA-140 MCU CMOS 20LD .5K EPRM, 0C to +70C, 20-SSOP 208mil, TUBE
7MBR25SC-120 MCU CMOS 18LD .5K EPRM, -40C to +85C, 18-SOIC 300mil, TUBE
7MBR25UA-120 MCU CMOS 18LD 20MHz .5K, 0C to +70C, 18-CERDIP, TUBE
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