參數(shù)資料
型號: 7MBR25NE120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: IGBT (1200V/25A/PIM)
中文描述: 25 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-21
文件頁數(shù): 4/7頁
文件大?。?/td> 422K
代理商: 7MBR25NE120
IGBT Module
7MBR25SC120
0
10
20
30
40
50
100
500
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=51
, Tj= 25°C
S
Collector current : Ic [ A ]
0
10
20
30
40
50
100
500
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 51
, Tj= 125°C
Collector current : Ic [ A ]
S
10
50
100
500
50
100
500
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=25A, VGE=±15V, Tj= 25°C
Gate resistance : Rg [
]
S
0
10
20
30
40
50
0
1
2
3
4
5
6
7
Err(25°C)
Eoff(25°C)
Err(125°C)
Eon(25°C)
Eoff(125°C)
Eon(125°C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=51
S
Collector current : Ic [ A ]
10
50
100
500
0
5
10
15
20
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=25A, VGE=±15V, Tj= 125°C
S
Gate resistance : Rg [
]
Eon
Err
Eoff
0
200
400
600
800
1000
1200
1400
0
50
100
150
200
250
300
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=51
, Tj<=125°C
Collector - Emitter voltage : VCE [ V ]
C
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