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參數資料
| 型號： | 7MBR25UA-120 |
| 英文描述： | MCU CMOS 18LD 20MHz .5K, 0C to +70C, 18-CERDIP, TUBE |
| 中文描述： | IGBT的 |
| 文件頁數： | 3/4頁 |
| 文件大小： | 74K |
| 代理商： | 7MBR25UA-120 |
MT6M04460
4.
Electrical characteristics ( at Tj= 25
o
C unless otherwise specified)
Characteristics
min.
typ.
Items
Symbols
Conditions
Max.
Units
Zero gate voltage
Collector current
Gate-Emitter leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
I
CES
V
GE
=
0 V, V
CE
=
600
V
-
-
0.02
mA
I
GES
V
CE
=
0 V, V
GE
=+-20 V
-
-
200
nA
V
GE(th)
V
CE
=
20 V, Ic =
20
mA
5.0
6.0
7.0
V
V
CE(sat)
V
GE
=
15 V, chip
20
A terminal
-
-
1.76
1.81
TBD
TBD
V
Ic =
Input capacitance
Cies
V
GE
=
f =
Vcc=
Ic =
V
GE
=
R
G
=
0 V, V
CE
=
1 MHz
300
V
20
A
±15 V
TBD
10 V
-
1550
-
pF
Turn-on time
ton
tr
tr
(i)
toff
tf
V
F
-
-
-
-
-
-
-
TBD
TBD
TBD
TBD
TBD
1.49
1.54
-
1.2
0.6
-
1.0
0.35
TBD
TBD
300
μ
s
Turn-off time
Forward on voltage
I
F
=
20
A chip
V
terminal
Reverse recovery time
Zero gate voltage
Collector current
Gate-Emitter leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
trr
IF =
20
A
-
ns
I
CES
V
GE
=
0 V, V
CE
=
600
V
-
-
0.02
mA
I
GES
V
CE
=
0 V, V
GE
=+-20 V
-
-
200
nA
V
GE(th)
V
CE
=
20 V, Ic =
20
mA
5.0
6.0
7.0
V
V
CE(sat)
V
GE
=
15 V, chip
20
A terminal
-
-
2.36
2.41
TBD
TBD
V
Ic =
Input capacitance
Cies
V
GE
=
f =
Vcc=
Ic =
V
GE
=
R
G
=
IF =
V
R
=
I
F
=
0 V, V
CE
=
1 MHz
300
V
20
A
±15 V
TBD
20
A
600
V
20
A chip
10 V
-
820
-
pF
Turn-on time
ton
tr
toff
tf
trr
I
RRM
V
FM
-
-
-
-
TBD
TBD
TBD
TBD
-
-
1.1
1.2
-
5000
495
1.2
0.6
1.0
0.35
300
0.02
-
1.5
1.0
-
520
μ
s
Turn-off time
Reverse recovery time
Reverse current
Forward on voltage
-
-
-
-
ns
mA
V
terminal
Reverse current
I
RRM
V
R
=
T = 25
o
C
T =100
o
C
T = 25/50
o
C
800
V
-
-
mA
Resistance
R
465
B value
B
3305
3375
3450
K
5.
Thermal resistance characteristics
Characteristics
min.
typ.
-
1.07
-
1.80
-
1.42
-
2.50
-
1.36
-
0.05
Items
Symbols
Conditions
Max.
TBD
TBD
TBD
TBD
TBD
-
Units
Inverter IGBT
Inverter FWD
Brake IGBT
Brake diode
Converter Diode
with Thermal Compound
(*)
Thermal resistance
(1 device)
R
th(j-c)
o
C/W
Contact Thermal resistance
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
R
th(c-f)
o
C/W
I
C
T
B
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 7MBR25UA-120-50 | 制造商:Fuji Electric 功能描述:IGBT 7 PACK MOD 1200V 25A M711 |
| 7MBR25VM-120-50 | 制造商:Fuji Electric 功能描述:IGBT 7 PK V SER 25A 1200V M719 制造商:Fuji Electric 功能描述:IGBT, 7 PK, V SER, 25A, 1200V, M719 |
| 7MBR25VM120-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
| 7MBR25VP-120-50 | 制造商:Fuji Electric 功能描述:IGBT 7 PK V SER 25A 1200V M719 制造商:Fuji Electric 功能描述:IGBT, 7 PK, V SER, 25A, 1200V, M719 |
| 7MBR25VP120-50 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
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