- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360548 > 7MBR50SB-060 MCU CMOS 20LD LOW PWR, -40C to +85C, 20-SSOP 208mil, T/R PDF資料下載
參數(shù)資料
| 型號(hào)： | 7MBR50SB-060 |
| 英文描述： | MCU CMOS 20LD LOW PWR, -40C to +85C, 20-SSOP 208mil, T/R |
| 中文描述： | IGBT的7個(gè)人信息管理 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 159K |
| 代理商： | 7MBR50SB-060 |
Electrical characteristics (Tj=25°C unless without specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
Switching time
t
on
t
r
t
off
t
f
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
t
rr
V
FM
I
RRM
V
R
=800V
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
Reverse current
Reverse recovery time
Forward voltage
Reverse current
C
(
I
CES
I
GES
V
GE(th)
V
CE(sat)
-V
CE
C
ies
V
CE
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=50mA
V
GE
=15V, Ic=50A
-Ic=50A
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=300V
I
C
=50A
V
GE
=±15V
R
G
=51 ohm
I
F
=50A
V
CES
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
I
C
=50A, V
GE
=15V
V
CC
=300V
I
C
=50A
V
GE
=±15V
R
G
=51ohm
V
R
=600V
I
F
=50A
1.0
20
7.5
2.8
3.0
1.2
0.6
1.0
0.35
0.3
1.0
0.1
2.8
0.8
0.6
1.0
0.35
1.0
0.6
1.55
1.0
3300
4.5
mA
μA
V
V
V
pF
μs
μs
μs
μs
μs
mA
μA
V
μs
μs
μs
μs
mA
μs
V
mA
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FRD
Brake IGBT
Converter Diode
With thermal compound
Contact thermal resistance * Rth(c-f)
0.63
1.60
0.63 °C/W
2.10
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Thermal Characteristics
IGBT Module
7MBR50NE060
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
*
NLU (Over current Limiting circuit)
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。