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| 型號(hào)： | 7P001FEB0300TZZ |
| 英文描述： | Eight Bit Flash Memory Card (AMD Based)(1MB,8位閃速存儲(chǔ)器卡（基于AMD 29F080）) |
| 中文描述： | 8位閃存卡（基于AMD）（1MB的，8位閃速存儲(chǔ)器卡（基于AMD的29F080）） |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 63K |
| 代理商： | 7P001FEB0300TZZ |
August 2000 Rev. 3 - ECO #13124
4
PCMCIA Flash Memory Card
FEB Series
PC Card Products
Symbol
Parameter
100 ns
150 ns
Min
Max
Min
Max
Unit
t
C
(R)
ta(A)
ta(CE)
ta(OE)
tcW
tW(WE)
Read Cycle Time
100
150
ns
Address Access Time
100
150
ns
Card Enable Access Time
100
150
ns
Output Enable Access Time
50
75
ns
Write Cycle Time
100
150
ns
Write Pulse Width
60
80
ns
VCC = 5V ± 5%, TA = 0
°
C to + 70
°
C
Note:
AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Symbol
Parameter
Notes
Min
Typ(1)
Max
Units
Test Conditions
tWHQV1
tEHQV1
tWHQV2
tEHQV2
Byte Program time
2,4
7
1000
μs
Block Program Time
2
0.15
0.7
sec
Word Program Mode
Block Erase Time
2
1
15
sec
VCC = 5V ± 5%, TA = 0
°
C to + 70
°
C
Notes:
1. Typical: Nominal voltages and TA = 25
°
C.
2. Excludes system overhead.
3. Valid for all speed options.
4. To maximize system performance RDY/BSY# signal should be polled.
5. Chip erase time based on 8 Mbit Flash components.
Symbol
Parameter
Density
(MBytes)
Notes
Typ
3
)
Max
Units
Test Conditions
ICCR
VCC Read Current
1,2,4,8
30
mA
VCC = 5.25V
tcycle = 100ns
ICCW
ICCE
ICCS
VCC Program Current
1,2,4,8
60
mA
VCC Erase Current
1,2,4,8
60
mA
VCC Standby Current
1,2,4,8
2)
20
50
μA
VCC = 5.25V
Control Signals = VCC
Reset = X
Notes:
1. All currents are RMS values unless otherwise specified.
2. Control Signals: CE1#, CE2#, OE#, WE#.
3. Typical: VCC = 5V, T = +25
°
C.
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics
(1)
AC Characteristics
(1)
Data Write and Erase Performance
(1 ,3)
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