參數(shù)資料
型號(hào)： 7P008ATA1003C25
英文描述： Flash Memory Card(8M位閃速存儲(chǔ)器卡)
中文描述： 閃存卡（800萬(wàn)位閃速存儲(chǔ)器卡）
文件頁(yè)數(shù)： 5/25頁(yè)
文件大小： 224K
代理商： 7P008ATA1003C25
June 2000 Rev. 5 - ECO #12901
5
PCMCIA Flash Memory Card
ATA10 Series
PC Card Products
Absolute Maximum Ratings
(1)
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS
0°C to +60 °C
-40°C to +85 °C
-20°C to +85 °C
-40°C to +85 °C
-0.5V to VCC+0.5V (1)
-0.5V to +7.0V
(1) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections
of this specification is not implied. Exposure
to absolute maximum rating conditions for
extended periods may affect reliability.
Symbol Parameter
Vcc
Power Supply Voltage
ICC1
Sector READ current
ICC2
Sector WRITE current
ICCS
VCC Sleep/Standby Current
Notes
Min
4.5V
Typ
Max
5.5V
Units
Test Conditions
2
2
50
50
0.5
mA
mA
mA
CMOS level
CMOS level
Control Signals = VCC
VCC = VCCMAX
Vin =VCC or VSS
VCC = VCCMAX
Vout =VCC or VSS
1, 2
ILI
Input Leakage Current
1, 3
±20
μA
ILO
Output Leakage Current
±20
μA
VIL
VIH
VOL
VOH
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
0.8
V
V
V
V
2.0
0.4
IOL = 3.2mA
IOH = -2.0mA
2.4
Notes:
1. Control Signals: CE
1
#, CE
2
#, OE#, WE#, REG#, IORD#, IOWR#.
2. Typical: VCC = 5V, T = +25C.
3. Exceptions: Leakage currents on control signals will be < 500 μA when VIN = GND due to
internal pull-up resistors.
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics
(1)
Recommended DC Operating Conditions
Parameter
Operating temp
Vcc voltage
Symbol
Ta
Vcc
Min
0
4.5
Max
60
5.5
Unit
C
V
Note
25
5
Note:
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