參數(shù)資料
型號： 85EPS12JPBF
元件分類： 參考電壓二極管
英文描述： 85 A, 1200 V, SILICON, RECTIFIER DIODE
封裝： POWIRTAB-1
文件頁數(shù)： 2/6頁
文件大?。?/td> 120K
代理商： 85EPS12JPBF
2
85EPS.. SAFE
IR Series
Bulletin I2139 rev. C 10/02
www.irf.com
I
F(AV)
Max.AverageForwardCurrent
85
A
@T
C
=95°C,180°conductionhalfsinewave
I
F(RMS)
Max.RMS ForwardCurrent
160
A
I
FSM
Max.PeakOneCycleNon-Repetitive
1400
10ms Sine pulse, rated VRRMapplied
SurgeCurrent
1500
10ms Sine pulse, no voltage reapplied
I
2t
Max. I
2t for fusing
10500
10ms Sine pulse, rated V
RRM
applied
9550
10ms Sine pulse, no voltage reapplied
I
2
√t Max. I2√t for fusing
105000
A
2
√s
t = 0.1 to 10ms, no voltage reapplied
T
J
Max.JunctionTemperatureRange
-40to150
°C
T
stg
Max.StorageTemperatureRange
-40to150
°C
R
thJC
Max.ThermalResistanceJunction
0.35
°C/W
DCoperation
toCase
R
thJA
Max.ThermalResistanceJunction
40
°C/W
toAmbient
R
thCS
TypicalThermalResistance,Caseto
0.2
°C/W
Mountingsurface,smoothandgreased
Heatsink
wt
ApproximateWeight
6(0.21)
g(oz.)
T
MountingTorque
Min.
6(5)
Max.
12(10)
Case Style
PowIRtabTM
Thermal-Mechanical Specifications
Parameters
85EPS..
Units
Conditions
Kg-cm
(Ibf-in)
Voltage Ratings
Part Number
V
RRM
, maximum
V
RSM
, maximum non repetitive
I
RRM
peak reverse voltage
150°C
VV
mA
85EPS08
800
900
85EPS12
1200
1300
V
FM
Max. Forward Voltage Drop
1.15
V
@ 85A, T
J
= 25°C
r
t
Forward slope resistance
3.17
m
VF(TO) Threshold voltage
0.86
V
I
RM
Max. Reverse Leakage Current
0.1
T
J
= 25 °C
3.0
TJ = 150 °C
Electrical Specifications
Parameters
85EPS..
Units
Conditions
T
J
= 150°C
V
R
= rated V
RRM
mA
Absolute Maximum Ratings
Parameters
85EPS..
Units
Conditions
A
2s
3
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