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參數(shù)資料
| 型號： | 87CNQ020ASM |
| 英文描述： | 20V 80A Schottky Common Cathode Diode in a D61-8-SM package |
| 中文描述： | 20V的共陰極80A條肖特基二極管- 8 -釤封裝，D61 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 202K |
| 代理商： | 87CNQ020ASM |
87CNQ020A
2
Bulletin PD-20045 rev. A 09/01
Voltage Ratings
www.irf.com
V
FM
Max. Forward Voltage Drop
(Per Leg)
0.45
0.51
0.32
0.39
0.29
0.37
5.5
550
90
70
480
V
V
V
V
V
V
@ 40A
@ 80A
@ 40A
@ 80A
@ 40A
@ 80A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 125 °C
T
J
= 125 °C
T
J
= 150 °C
T
J
= T
J
max.
(1)
I
RM
Max. Reverse Leakage Current
(Per Leg)
mA
mA
mA
mA
mA
(1)
V
R
= 5V
V
R
= 3.3V
V
R
= 10V
V
F(TO)
Threshold Voltage
r
t
Forward Slope Resistance
C
T
Max. Junction Capacitance (Per Leg)
L
S
Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(Rated V
R
)
Thermal-Mechanical Specifications
Parameters
0.191
2.3
6500
V
m
pF
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
(Per Leg)
5.5
nH
10000
V/ μs
I
F(AV)
Max. Average Forward
Current
I
FSM
Max. Peak One Cycle Non-Repetitive
Surge Current (Per Leg)
E
AS
Non-Repetitive Avalanche Energy
(Per Leg)
I
AR
Repetitive Avalanche Current
(Per Leg)
(Per Device)
(Per Leg)
80
40
6000
1100
36
A
50% duty cycle @ T
C
= 135°C, rectangular wave orm
5μs Sine or 3μs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
J
= 25 °C, I
AS
= 8 Amps, L = 1.12 mH
mJ
8
A
Current decaying inearly o zero n 1 μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
Electrical Specifications
Parameters 87CNQ Units Conditions
Part number 87CNQ020A / ..020ASM / ..020ASL
Max.
DC Reverse Voltage (V)
@ 125° C
V
R
V
R
Absolute Maximum Ratings
Parameters
Max.
DC Reverse Voltage (V)
@ 150° C
87CNQ Units
Conditions
A
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
T
J
T
stg
R
thJC
Max. Thermal Resistance Junction
to Case (Per Leg)
R
thJC
Max. Thermal Resistance Junction
to Case (Per Package)
R
Typical Thermal Resistance, Case
to Heatsink
(D61-8 Only)
wt
Approximate Weight
T
Mounting Torque
(D61-8 Only)
Max. Junction Temperature Range
Max. Storage Temperature Range
-55 o 150
-55 o 150
°C
°C
0.85
°C/W DC operation
0.42
°C/W DC operation
0.30
°C/W Mounting surface smooth and greased
Device flatness < 5 mils
g (oz.)
7.8 (0.28)
40 (35)
58 (50)
Min.
Max.
Kg-cm
(Ibf-in)
(1) Pulse Width < 300μs, Duty Cycle <2%
20
10
T
J
= 150 °C
87CNQ
Units
Conditions
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