參數(shù)資料
型號: 8EWS10STRR
廠商: International Rectifier
英文描述: SURFACE MOUNTABLE INPUT RECTIFIER DIODE
中文描述: 表面貼裝輸入整流器二極管
文件頁數(shù): 2/7頁
文件大?。?/td> 199K
代理商: 8EWS10STRR
2
8EWS..S
SAFE
IR
Series
Bulletin I2108 rev. G 08/00
Voltage Ratings
T
J
T
stg
Max. Junction Temperature Range
- 55 to 150
°C
Max. Storage Temperature Range
- 55 to 150
°C
Soldering Temperature
240
°C
for 10 seconds (1.6mm rom case)
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Typ. Thermal Resistance Junction
to Ambient (PCB Mount)**
wt
Approximate Weight
3
°C/W
DC operation
50
°C/W
1(0.03)
g (oz.)
T
Case Style
TO-252AA (D-PAK)
Thermal-Mechanical Specifications
Parameters
8EWS..S
Units
Conditions
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140μm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Part Number
V
RRM
, maximum
peak reverse voltage
V
V
RSM
, maximum non repetitive
peak reverse voltage
V
I
RRM
150°C
mA
8EWS08S
800
900
8EWS10S
1000
1100
0.5
8EWS12S
1200
1300
I
F(AV)
Max. Average Forward Current
8
A
@ T
C
= 95° C, 180° conduction half sine wave
I
FSM
Max. Peak One Cycle Non-Repetitive
170
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
Surge Current
200
I
2
t
Max. I
2
t for fusing
144
10ms Sine pulse, rated V
RRM
applied
204
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
2040
A
2
s
t = 0.1 to 10ms, no voltage reapplied
Absolute Maximum Ratings
Parameters
8EWS..S
Units
Conditions
A
A
2
s
V
FM
Max. Forward Voltage Drop
1.1
V
@ 8A, T
J
= 25°C
r
t
Forward slope resistance
21.8
m
V
F(TO)
Threshold voltage
0.81
V
I
RM
Max. Reverse Leakage Current
0.05
T
J
= 25 °C
0.50
T
J
= 150 °C
Electrical Specifications
Parameters
8EWS..S
Units
Conditions
T
J
= 150°C
V
R
= rated V
RRM
mA
相關(guān)PDF資料
PDF描述
8EWS12STRL SURFACE MOUNTABLE INPUT RECTIFIER DIODE
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