參數(shù)資料
型號: 8GBU04
廠商: International Rectifier
元件分類: 參考電壓二極管
英文描述: 8.0 Amps Single Phase Full Wave
中文描述: 八點(diǎn)〇安培單相全波
文件頁數(shù): 2/5頁
文件大?。?/td> 75K
代理商: 8GBU04
8GBU Series
Bulletin I2719 rev. F 11/02
2
www.irf.com
I
O
Maximum DC output current
8.0
6.4
200
A
T
C
= 100°C, Resistive & nductive oad
T
C
= 100°C, Capacitive oad
t = 10ms
I
FSM
Maximum peak, one-cycle
non-repetitive surge current,
following any rated oad condition
and with rated V
RRM
reapplied
Maximum I
2
t for fusing,
initial T
J
= T
J
max
Maximum peak forward voltage
per diode
Typical peak reverse eakage
curren t per diode
210
t = 8.3ms
T
J
= 150°C
I
2
t
200
184
A
2
s
t = 10ms
t = 8.3ms
V
FM
1.0
V
T
J
= 25
o
C, I
FM
= 8A
I
RM
5.0
400
μA
T
J
= 25
o
C, 100% V
RRM
T
J
= 150
o
C, 100% V
RRM
V
RRM
Maximum repetitive peak
reverse voltage range
50 to 1200
V
Forward Conduction
Voltage V
RRM
, max repetitive V
RSM
, max non-repetitive V
RMS
, max RMS
Code
peak rev. voltage
T
J
= T
J
max.
V
V
005
50
01
100
02
200
04
400
06
600
08
800
10
1000
12
1200
I
max.
@ rated V
RRM
@ rated V
T
J
= 25°C
μA
5
5
5
5
5
5
5
5
I
max.
Type number
voltage
T
J
= T
J
max.
V
35
70
140
280
420
560
700
850
T
J
= T
J
max.
V
80
150
300
500
725
900
1100
1300
T
J
= 150°C
μA
400
400
400
400
400
400
400
400
8GBU
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters
8GBU
Unit
Conditions
Thermal and Mechanical Specifications
Note (1): Bridge mounted on Aluminun heat sink of dim 82x82x3.0mm, use silicon thermal compound heat
transfer and bolt down using 3mm screw
T
J
T
stg
R
thJC
Operating and storage
temperature range
-55 to 150
o
C
Max. thermal resistance
junction to case
2.2
°C/ W
DC rated current through bridge (1)
R
thJA
Thermal resistance,
junction to ambient
Approximate weight
21
°C/ W
DC rated current through bridge (1)
W
4 (0.14)
g (oz)
T
Mounting Torque
1.0
9.0
Nm
Lb.in
Bridge to Heatsink
Parameters
8GBU
Unit
Conditions
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