參數(shù)資料
型號: 8N60
廠商: 友順科技股份有限公司
英文描述: 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
中文描述: 七點(diǎn)五安培,600/650伏特N溝道功率MOSFET
文件頁數(shù): 6/8頁
文件大?。?/td> 220K
代理商: 8N60
8N60
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-115,B
6 of 8
T Y PICAL CHARACTERIST ICS
00
D
D
(
Drain Current, I
D
(A)
5
1
2
4
5
6
On-Resistance Variation vs. Drain Current
and Gate Voltage
3
10
15
20
1
0.1
0.2
Source-Drain Voltage, V
SD
(V)
R
D
(
Body Diode Forward Voltage vs. Source
Current
1.8
0.4 0.6 0.8 1.0 1.2
1.6
1.4
10
150
25
Notes:
1. V
GS
=0V
2.250
μ
s Test
V
GS
=20V
V
GS
=10V
Note: T
J
=25
1900
1700
1500
1300
1100
900
0
0.1
Drain-SourceVoltage, V
DS
(V)
500
300
100
1
10
Capacitance Characteristics
(Non-Repetitive)
0
Total Gate Charge, Q
G
(nC)
5
15
25
8
10
12
10
6
4
2
0
V
DS
=120V
V
DS
=300V
V
DS
=480V
20
Gate Charge Characteristics
700
C
iss
C
oss
C
rss
C
iss=
C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
Notes:
1. V
GS
=0V
2.f = 1MHz
30
Note: I
D
=8A
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