參數(shù)資料
型號(hào): 8TQ080GSTRLPBF
元件分類: 參考電壓二極管
英文描述: 8 A, 80 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, SMD-220, D2PAK-3
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 156K
代理商: 8TQ080GSTRLPBF
8TQ...GS Series
2
Bulletin PD-20837 09/04
V
FM
Max. Forward Voltage Drop
(1)
0.72
V
@ 8A
* See Fig. 1
0.88
V
@ 16A
0.58
V
@ 8A
0.69
V
@ 16A
I
RM
Max. Reverse Leakage Current (1)
0.55
mA
T
J =
25 °C
* See Fig. 2
7
mA
T
J = 125 °C
C
T
Max. Junction Capacitance
500
pF
V
R = 5VDC (test signal range 100Khz to 1Mhz) 25 °C
L
S
Typical Series Inductance
8
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/ s
(Rated V
R)
T
J =
25 °C
T
J = 125 °C
V
R = rated VR
Electrical Specifications
Parameters
8TQ
Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max. Junction Temperature Range
-55 to 175
°C
Tstg
Max. Storage Temperature Range
-55 to 175
°C
R
thJC Max. Thermal Resistance Junction
2.0
°C/W DC operation * See Fig. 4
to Case
R
thCS Typical Thermal Resistance, Case to
0.50
°C/W Mounting surface , smooth and greased
Heatsink
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Max.
12 (10)
Marking Device
8TQ100GS
Kg-cm
(Ibf-in)
Thermal-Mechanical Specifications
Parameters
8TQ
Units
Conditions
Part number
8TQ080GS
8TQ100GS
V
R
Max. DC Reverse Voltage (V)
V
RWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
I
F(AV) Max. Average Forward Current
8
A
50% duty cycle @ T
C = 157° C, rectangular wave form
* See Fig. 5
I
FSM
Max. Peak One Cycle Non-Repetitive
850
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 7
230
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
7.50
mJ
T
J = 25 °C, IAS = 0.50 Amps, L = 60 mH
I
AR
Repetitive Avalanche Current
0.50
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J max. VA = 1.5 x VR typical
Parameters
8TQ
Units
Conditions
Absolute Maximum Ratings
A
Following any rated
load condition and
with rated VRRM applied
80
100
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