參數(shù)資料
型號: 9012A
廠商: BCD SEMICONDUCTOR MANUFACTURING LTD
元件分類: 小信號晶體管
英文描述: 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: DIE-2
文件頁數(shù): 1/1頁
文件大?。?/td> 161K
代理商: 9012A
May.2004
Version :0.0
Page 1 of 1
9012A Silicon PNP Epitaxial Transistor
Description: The 9012A is designed for audio frequency general amplifier applications
Features: ●Excellent hFE Linearity
●Complementary to 9013A
Chip Appearance
Chip Size
440um×440um
Chip Thickness
210±20um
Base
110um×110um
Bonding Pad Size
Emitter
110um×110um
Front Metal
Al
Backside Metal
Au
Scribe line width
50um
Wafer Size
6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Symbol
Test Condition
Min
Max
Unit
Collector Cutoff Current
ICBO
VCB=-35V, IE=0
-0.1
uA
Emitter Cutoff Current
IEBO
VEB=-5V, IC=0
-0.1
uA
Collector-Base Breakdown Voltage
BVCBO
IC=-0.1mA
-40
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-1mA
-25
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-0.1mA
-5.0
V
DC Current Gain
hFE
VCE=-1V, IC=-50mA
150
400
Collector Saturation Voltage
VCE(sat)
IC=-500mA,IB=-50mA
-0.5
V
9012A
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