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參數(shù)資料
| 型號(hào)： | 9013G-H-T92-K |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | 9013G-H-T92-K |
9013
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 2
www.unisonic.com.tw
QW-R201-030.Ba
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Collector dissipation
PC
625
mW
Junction Temperature
TJ
125
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
BVCBO
IC=-100μA, IE=0
40
V
Collector-emitter breakdown voltage
BVCEO
IC=1mA, IB=0
20
V
Emitter-base breakdown voltage
BVEBO
IE=100μA, IC=0
5
V
Collector cutoff current
ICBO
VCB=25V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB=3V, IC=0
100
nA
DC current gain
hFE1
hFE2
VCE=1V, IC=50mA
VCE=1V, IC=500mA
64
40
120
300
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB=-50mA
0.16
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=-500mA, IB=-50mA
0.91
1.2
V
Base-emitter on voltage
VBE(on)
VCE=1V, IC=10mA
0.6
0.67
0.7
V
CLASSIFICATION OF hFE1
RANK
D
E
F
G
H
I
RANGE
64-91
78-112
96-135
112-166
144-202
190-300
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 9013G-H-T92-B | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 9013G-F-T92-R | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 9013G-F-T92-B | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 9013G-D-T92-B | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 9013-I-T92-K | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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